A Ferroelectric BEoL Module: Adding Non-Volatile Memories and Varactors to Existing Technology Nodes

被引：3

作者：

Seidel, Konrad ^{[1
]}

Lehninger, David ^{[1
]}

Abdulazhanov, Sukhrob ^{[1
]}

Sunbul, Ayse ^{[1
]}

Hoffmann, Raik ^{[1
]}

Zimmermann, Katrin ^{[1
]}

Yadav, Nandakishor ^{[1
]}

Le, Quang Huy ^{[1
]}

Landwehr, Matthias ^{[1
]}

Heinig, Andreas ^{[1
]}

Mahne, Hannes ^{[2
]}

Bernert, Kerstin ^{[2
]}

Thiem, Steffen ^{[2
]}

Kampfe, Thomas ^{[1
]}

Lederer, Maximilian ^{[1
]}

机构：

[1] Fraunhofer IPMS, D-01109 Dresden, Germany

[2] X FAB Dresden GmbH & Co KG, D-01109 Dresden, Germany

来源：

2023 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE, IITC AND IEEE MATERIALS FOR ADVANCED METALLIZATION CONFERENCE, MAM, IITC/MAM | 2023年

关键词：

ferroelectrics; non-volatile memory; varactor; backend-of-line;

D O I：

10.1109/IITC/MAM57687.2023.10154868

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

In this paper we show the potential of further device functionalization in interconnect layers on established technologies by implementing innovative ferroelectric films based on CMOS-compatible hafnium zirconium oxide (HZO). Thus, offering new opportunities for advanced system on chip solutions with reduced integration complexity and low technology cost adder. Based on the example of implemented ferroelectric capacitors in the BEoL of XFAB's XT018 technology we demonstrate on the same wafer the versatility of such ferroelectric capacitors for the application as memory bitcell and varactor device.

引用

页数：3

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