Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

被引：5

作者：

Ndiaye, Samba ^{[1
]}

Duguay, Sebastien ^{[1
]}

Vurpillot, Francois ^{[1
]}

Carraro, Chiara ^{[2
,3
]}

Maggioni, Gianluigi ^{[2
,3
]}

Di Russo, Enrico ^{[2
,3
,4
]}

De Salvador, Davide ^{[2
,3
]}

Napolitani, Enrico ^{[2
,3
,5
]}

Rigutti, Lorenzo ^{[1
]}

机构：

[1] Univ Rouen Normandie, CNRS, INSA Rouen, Grp Phys Materiaux, F-76000 Rouen, France

[2] Univ Padua, Dipartimento Fis & Astron, Via Marzolo 8, I-35131 Padua, Italy

[3] Ist Nazl Fis Nucl, Lab Nazl Legnaro, Viale Univ 2, I-35020 Legnaro, Italy

[4] CNR IMM Sect Bologna, Via Gobetti 101, I-40129 Bologna, Italy

[5] CNR IMM, Via S Sofia 64, I-95123 Catania, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2023年 / 164卷

关键词：

Atom probe tomography; Pulsed laser melting; FIELD EVAPORATION; DYNAMICS; IONS;

D O I：

10.1016/j.mssp.2023.107641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting have been analyzed by Atom Probe Tomography (APT). The 1D concentration profiles obtained by APT under low field conditions are consistent with those obtained by secondary ion mass spectrometry. However, the 3D distribution of Sb indicates the occurrence of Sb segregation along line defects, outside of which Sb is randomly distributed. The APT mea-surements indicate a dependence of the measured composition on the electric field. By analyzing the mass spectra and the multiple detection events, we show that low-field conditions should be adopted in order to obtain an accurate composition measurement.

引用

页数：8

共 49 条

[31] Diffusion doping of germanium by sputtered antimony sources [J].

Maggioni, Gianluigi ;

Sgarbossa, Francesco ;

Napolitani, Enrico ;

Raniero, Walter ;

Boldrini, Virginia ;

Carturan, Sara Maria ;

Napoli, Daniel Ricardo ;

De Salvador, Davide .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 75 :118-123

[32] Room-temperature sub-band gap optoelectronic response of hyperdoped silicon [J].

Mailoa, Jonathan P. ;

Akey, Austin J. ;

Simmons, Christie B. ;

Hutchinson, David ;

Mathews, Jay ;

Sullivan, Joseph T. ;

Recht, Daniel ;

Winkler, Mark T. ;

Williams, James S. ;

Warrender, Jeffrey M. ;

Persans, Peter D. ;

Aziz, Michael J. ;

Buonassisi, Tonio .

NATURE COMMUNICATIONS, 2014, 5

[33] Multi-microscopy study of the influence of stacking faults and three-dimensional In distribution on the optical properties of m-plane InGaN quantum wells grown on microwire sidewalls [J].

Mancini, L. ;

Hernandez-Maldonado, D. ;

Lefebvre, W. ;

Houard, J. ;

Blum, I. ;

Vurpillot, F. ;

Eymery, J. ;

Durand, C. ;

Tchernycheva, M. ;

Rigutti, L. .

APPLIED PHYSICS LETTERS, 2016, 108 (04)

[34] Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field [J].

Mancini, Lorenzo ;

Amirifar, Nooshin ;

Shinde, Deodatta ;

Blum, Ivan ;

Gilbert, Matthieu ;

Vella, Angela ;

Vurpillot, Francois ;

Lefebvre, Williams ;

Larde, Rodrigue ;

Talbot, Etienne ;

Pareige, Philippe ;

Portier, Xavier ;

Ziani, Ahmed ;

Davesnne, Christian ;

Durand, Christophe ;

Eymery, Joel ;

Butte, Raphael ;

Carlin, Jean-Francois ;

Grandjean, Nicolas ;

Rigutti, Lorenzo .

JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (41) :24136-24151

[35] Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlN [J].

Morris, Richard J. H. ;

Cuduvally, Ramya ;

Lin, Jhao-Rong ;

Zhao, Ming ;

Vandervorst, Wilfried ;

Thuvander, Mattias ;

Fleischmann, Claudia .

ULTRAMICROSCOPY, 2022, 241

[36] Accuracy of pulsed laser atom probe tomography for compound semiconductor analysis [J].

Mueller, M. ;

Gault, B. ;

Smith, G. D. W. ;

Grovenor, C. R. M. .

17TH INTERNATIONAL CONFERENCE ON MICROSCOPY OF SEMICONDUCTING MATERIALS 2011, 2011, 326

[37] Laser-induced activation of Mg-doped GaN: quantitative characterization and analysis [J].

Nardo, A. ;

de Santi, C. ;

Carraro, C. ;

Sgarbossa, F. ;

Buffolo, M. ;

Diehle, P. ;

Gierth, S. ;

Altmann, F. ;

Hahn, H. ;

Fahle, D. ;

Heuken, M. ;

Fouchier, M. ;

Gasparotto, A. ;

Napolitani, E. ;

Meneghesso, G. ;

Zanoni, E. ;

Meneghini, M. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2022, 55 (18)

[38] Surface Dynamics of Field Evaporation in Silicon Carbide [J].

Ndiaye, Samba ;

Bacchi, Christian ;

Klaes, Benjamin ;

Canino, Mariaconcetta ;

Vurpillot, Francois ;

Rigutti, Lorenzo .

JOURNAL OF PHYSICAL CHEMISTRY C, 2023, 127 (11) :5467-5478

[39] Clustering and nearest neighbour distances in atom-probe tomography [J].

Philippe, T. ;

De Geuser, F. ;

Duguay, S. ;

Lefebvre, W. ;

Cojocaru-Miredin, O. ;

Da Costa, G. ;

Blavette, D. .

ULTRAMICROSCOPY, 2009, 109 (10) :1304-1309

[40] Atom probe tomography of nitride semiconductors [J].

Rigutti, L. ;

Bonef, B. ;

Speck, J. ;

Tang, F. ;

Oliver, R. A. .

SCRIPTA MATERIALIA, 2018, 148 :75-81

← 1 2 3 4 5 →