Atom probe tomography of hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting

被引：3

作者：

Ndiaye, Samba ^{[1
]}

Duguay, Sebastien ^{[1
]}

Vurpillot, Francois ^{[1
]}

Carraro, Chiara ^{[2
,3
]}

Maggioni, Gianluigi ^{[2
,3
]}

Di Russo, Enrico ^{[2
,3
,4
]}

De Salvador, Davide ^{[2
,3
]}

Napolitani, Enrico ^{[2
,3
,5
]}

Rigutti, Lorenzo ^{[1
]}

机构：

[1] Univ Rouen Normandie, CNRS, INSA Rouen, Grp Phys Materiaux, F-76000 Rouen, France

[2] Univ Padua, Dipartimento Fis & Astron, Via Marzolo 8, I-35131 Padua, Italy

[3] Ist Nazl Fis Nucl, Lab Nazl Legnaro, Viale Univ 2, I-35020 Legnaro, Italy

[4] CNR IMM Sect Bologna, Via Gobetti 101, I-40129 Bologna, Italy

[5] CNR IMM, Via S Sofia 64, I-95123 Catania, Italy

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2023年 / 164卷

关键词：

Atom probe tomography; Pulsed laser melting; FIELD EVAPORATION; DYNAMICS; IONS;

D O I：

10.1016/j.mssp.2023.107641

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hyper-doped Ge layers synthesized by Sb in-diffusion by pulsed laser melting have been analyzed by Atom Probe Tomography (APT). The 1D concentration profiles obtained by APT under low field conditions are consistent with those obtained by secondary ion mass spectrometry. However, the 3D distribution of Sb indicates the occurrence of Sb segregation along line defects, outside of which Sb is randomly distributed. The APT mea-surements indicate a dependence of the measured composition on the electric field. By analyzing the mass spectra and the multiple detection events, we show that low-field conditions should be adopted in order to obtain an accurate composition measurement.

引用

页数：8

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