High storage and operational stability self-powered UV photodetector based on p-CuI/n-GaN heterojunction prepared by thermal evaporation method

被引：15

作者：

Xiang, Guojiao ^{[1
]}

Zhang, Jinming ^{[1
]}

Yue, Zhiang ^{[1
]}

Zhang, Xian ^{[1
]}

Song, Chengle ^{[1
]}

Ding, Bingxin ^{[1
]}

Wang, Lukai ^{[1
]}

Wang, Yang ^{[1
]}

He, Hangyu ^{[1
]}

Wang, Hui ^{[1
]}

Zhao, Yang ^{[1
]}

机构：

[1] Henan Univ Sci & Technol, Sch Phys & Engn, Henan Key Lab Photoelect Energy Storage Mat & Appl, 263 Kaiyuan Ave, Luoyang 471003, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2023年 / 640卷

基金：

中国国家自然科学基金;

关键词：

UV photodetector; Self-powered; P-n heterojunction; Copper iodide; Stable operation; TEMPERATURE; DEPOSITION;

D O I：

10.1016/j.apsusc.2023.158397

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Self-powered ultraviolet (UV) photodetectors play an important role in environmental monitoring, aerospace and other fields because of the advantage of effective light response without an external power supply. Herein, a p-CuI/n-GaN heterojunction UV photodetector with self-powered function is constructed by vacuum thermal evaporation method. At 365 nm UV irradiation, the photodetector has an on/off ratio of 7536, a large photo-current (similar to 35 mA) and a fast response time (rise/decay time of 10.46/10.35 ms) at zero bias. There was no significant decrease in photocurrent during the 100 on/off cycles of the continuous test, and the photocurrent of the photodetector can maintain 93.17% of the initial value after continuous operation for 15 h without bias voltage. The rise in ambient temperature exhibits a negative effect on the UV photodetector, but when it is naturally cooled from 80 degrees C to room temperature (RT), the photocurrent can restore to 95% of the original level. Furthermore, the photodetector maintains superior stability even after being stored in air for 3 months of without package. This work not only proves the controllable preparation strategy of CuI thin films, but also provides an efficient structure for self-powered UV photodetectors with high operational and storage stability.

引用

页数：10

共 51 条

[11] Rapid Response Solar Blind Deep UV Photodetector with High Detectivity Based On Graphene:N/βGa2O3:N/GaN p-i-n Heterojunction Fabricated by a Reversed Substitution Growth Method [J].