Ultra-Short Lifetime of Intersubband Electrons in Resonance to GaN-Based LO-Phonons at 92 meV

被引：0

作者：

Hofstetter, Daniel ^{[1
]}

Beck, Hans ^{[2
]}

Bour, David P. ^{[3
]}

机构：

[1] Chemin Chateau 5, CH-2068 Hauterive, Switzerland

[2] Rue Peupliers 6, CH-2014 Bole, Switzerland

[3] Google LLC, 1250 Reliance Way, Fremont, CA 94539 USA

来源：

PHOTONICS | 2023年 / 10卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

GaN; quantum cascade structure; intersubband transition; resonance; optical emission; LO-phonon frequency; large FWHM; short lifetime; QUANTUM-WELL; SCATTERING TIMES; ABSORPTION; WAVELENGTH; RELAXATION; GAAS;

D O I：

10.3390/photonics10080909

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, we report on the ultra-short lifetime of excited intersubband electrons in a 38 angstrom wide AlGaN/GaN-based quantum well. The rapid decay of these charge carriers occurs due to a resonance between the relevant intersubband transition energy and the size of the GaN-based LO-phonon at 92 meV. Based on the experimentally observed Lorentz-shaped intersubband emission peak with a spectral width of roughly 6 meV (48 cm (1)) respecting the Fourier transform limit, a very short lifetime, namely 111 fs, could be calculated. By comparing this lifetime to the existing literature data, our value confirms the potential high-speed capability of III-nitride-based optoelectronics.

引用

页数：8