Surface H-field mapping of a microwave limiter chip based on quantum diamond probe

被引:3
作者
Ma, Wenhao [1 ]
Gao, Tianran [1 ]
Chen, Nuocheng [1 ]
Zhou, Li [1 ]
Liu, Xinyu [1 ]
Chen, Guobin [2 ]
Yin, Xiaohan [1 ]
Yang, Fan [3 ]
Xu, Qing [1 ]
Gong, Jianwei [4 ]
Ling, Xianbao [4 ]
Du, Guanxiang [1 ]
机构
[1] Nanjing Univ Posts & Telecommun, Coll Telecommun & Informat Engn, Nanjing 210003, Peoples R China
[2] Suqian Coll, Sch Mech & Elect Engn, Suqian, Peoples R China
[3] Nanjing Univ Posts & Telecommun, Coll Automat & Coll Artificial Intelligence, Nanjing, Peoples R China
[4] China Elect Technol Corp, Res Inst 55, Nanjing, Peoples R China
基金
国家重点研发计划;
关键词
diamond NV center; electric field; limiter chip; optic; quantum sensing; SPINS;
D O I
10.1002/mop.33631
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the increasing integration and complexity of chips, the problem of wafer-level electromagnetic compatibility (EMC) is becoming more and more prominent, and the spatial resolution and operating frequency of existing EMC test techniques can no longer meet the demand for wafer-level EMC testing. In this work, a surface H-field imaging system based on a micron-sized diamond crystal containing nitrogen-vacancy centers is proposed, which is micrometer resolved, quantum calibrated, frequency tunable, and nonintrusive to the H-field of the device to be tested. The surface H-field of a limiter chip at different input power is scanned for imaging, revealing how the energy is dissipated across the chip when exceeding limiting power. The result is essential for understanding the workings of the limiter chip and for optimizing the chip design.
引用
收藏
页码:1622 / 1628
页数:7
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