Challenges in Design, Data Placement, Migration and Power-Performance Trade-offs in DRAM-NVM-based Hybrid Memory Systems

被引：1
|
作者：
Rai, Sadhana [1 ]
Talawar, Basavaraj [1 ]
机构：
[1] Natl Inst Technol Karnataka, Dept Comp Sci & Engn, Surathkal 575025, India
来源：
IETE TECHNICAL REVIEW | 2023年 / 40卷 / 04期
关键词：
DRAM; Hybrid memory; Migration; NVM; Power; Performance; AWARE PAGE REPLACEMENT; MAIN MEMORY; MANAGEMENT; ENERGY; ALGORITHM; PCM; ALLOCATION; LIFETIME; POLICY;
D O I：
10.1080/02564602.2022.2127945
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
DRAM-NVM-based hybrid memory opens up a varied range of power-performance-area operational configurations through page migration between the high-performance DRAM and the reliable NVM. The amalgamation of two technologies requires various modifications for the existing monolithic DRAM-based systems. This paper summarizes the current research work in the areas of data placement and page migration in hybrid memories. The challenges and design solutions from a range of NVMs-PCM, STT-RAM, ReRAM is presented. This paper also identifies several research challenges in these areas.
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收藏
页码：498 / 520
页数：23
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