A Ka-Band Ultrawideband Variable Gain Amplifier With Low Phase Variation for 5G Communications

被引：1

作者：

Zhang, Siwei ^{[1
]}

Gao, Li ^{[1
]}

Li, Hui-Yang ^{[1
]}

Xu, Jin-Xu ^{[1
]}

Zhang, Xiu Yin ^{[1
]}

机构：

[1] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510641, Peoples R China

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2024年 / 34卷 / 05期

关键词：

Gain; Tuning; Transistors; Gain measurement; Noise measurement; Inductors; 5G mobile communication; CMOS; low phase variation; millimeter-wave (mm-wave); ultrawideband (UWB) variable gain amplifier (VGA);

D O I：

10.1109/LMWT.2024.3380416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 23-42.5-GHz Ka-band ultrawideband (UWB) variable gain amplifier (VGA) for 5G applications, realized in TSMC 28-nm bulk CMOS process. The proposed VGA adopts a three-level transistor stack structure, and additional inductors are added to compensate for pole roll-off at high frequencies. A cross-connected gain control structure is used to reduce phase variation by minimizing the impedance variation caused by gain tuning. The proposed UWB VGA has a measured peak gain of 9.6 dB at 26 GHz with a 3-dB bandwidth of 23-42.5 GHz. The measured gain tuning range is 16 dB and the root-mean-square (rms) phase variation is smaller than 2(degrees) . The UWB VGA draws 15-mA current from 1.8-V power supply with a core size of 0.21 mm(2) .

引用

页码：516 / 519

页数：4

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