Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering

被引：2

作者：

Weng, You-Chen ^{[1
]}

Hsu, Heng-Tung ^{[2
]}

Tsao, Yi-Fan ^{[2
]}

Panda, Debashis ^{[2
]}

Huang, Hsuan-Yao ^{[2
]}

Kao, Min-Lu ^{[3
]}

Lan, Yu-Pin ^{[1
]}

Chang, Edward Yi ^{[2
,3
]}

Lee, Ching-Ting ^{[4
]}

机构：

[1] Natl Yang Ming Chiao Tung Univ, Coll Photon, Tainan 71150, Taiwan

[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan

[3] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[4] Natl Cheng Kung Univ, Inst Microelect, Adv Optoelect Technol Ctr, Dept Elect Engn, Tainan 701, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2023年 / 12卷 / 03期

关键词：

GAN; CARBON;

D O I：

10.1149/2162-8777/acbf72

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we demonstrate the AlGaN/GaN high electron mobility transistors (HEMTs) on Si substrate using an AlGaN back-barrier (BB) and super-lattice (SL) buffer to achieve high breakdown and low current collapse (CC) properties for Radio-frequency (RF) applications. The HEMTs also demonstrated low initial vertical leakage current, high thermal stability, and smaller drain-lag with reduced leakage currents as compared to the devices using step-graded (SG) AlGaN buffer. Also, the device showed improved RF performances with higher f ( T ) and f (max) as compared to the devices with SG buffer.

引用

页数：6

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