The photoresponse behavior of a Schottky structure with a transition metal oxide-doped organic polymer (RuO2:PVC) interface

The RuO2-doped organic polymer composite structure was used as the interface to study the photodiode properties of a Schottky structure. Some basic electrical and optoelectrical parameters of the structure interlaid with RuO2:PVC were investigated using the I-V characteristics in the dark and under definite illuminations. The values of saturation current (I-0), barrier height (phi(B0)) at zero-bias, ideality factor (n), series and shunt resistances (R-s and R-sh) were calculated by using different methods such as thermionic emission, Ohm's law, Cheung and Norde functions. They were found to be intensely depend on illumination levels and voltage. Forward bias I-V data were used to obtain energy-dependent profiles of interface-states (N-ss) for each illumination level. Moreover, the open-circuit voltage (V-oc), short circuit current (I-sc), filling factor (FF), and efficiency (eta) of the fabricated Schottky structure were found as 0.118 V, 6.4 mu A, 46%, and 0.088% under 50 mW/cm(-2), respectively. According to the findings, the RuO2:PVC organic interlayer is light-sensitive and can thus be used in optoelectronic applications, such as photodetectors and photodiodes.[Graphic]