28-GHz Bidirectional RF CMOS Amplifier Employing Body-Effect Control

被引：9

作者：

Kim, Subin ^{[1
]}

Jeong, Juhui ^{[1
]}

Min, Byung-Wook ^{[2
]}

Han, Junghwan ^{[1
]}

机构：

[1] Chungnam Natl Univ, Dept Radio & Informat Commun Engn, Daejeon 34134, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 03722, South Korea

来源：

IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS | 2023年 / 33卷 / 06期

基金：

新加坡国家研究基金会;

关键词：

Switches; Radio frequency; 5G mobile communication; Transceivers; Wireless communication; Switching circuits; Gain; Bidirectional; body-effect control; complementary metal-oxide-semiconductor (CMOS); fifth-generation (5G) new radio (NR); radio frequency (RF) amplifier; supply switch; BAND-SWITCHABLE LNA;

D O I：

10.1109/LMWT.2023.3241603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a 28-GHz bidirectional amplifier that operates as a low-noise amplifier (LNA) and a drive amplifier in the receiver (RX) (forward) and transmitter (TX) (backward) modes, respectively. In the proposed design, the bidirectional operation is realized through supply switching (SS) by utilizing the symmetric structure of a complementary metal-oxide-semiconductor (CMOS) device. Additionally, the body voltage control of an n-type MOS (nMOS) device is applied to attain symmetric and enhanced performance in both the forward and backward operations. The proposed design was fabricated using the 65-nm CMOS process and primarily characterized in the 28-GHz band. It achieves a nearly identical performance in both the forward and backward modes.

引用

页码：695 / 698

页数：4

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