Metavalent Bonding Origins of Unusual Properties of Group IV Chalcogenides

被引:39
作者
Arora, Raagya [1 ]
Waghmare, Umesh V. [1 ,2 ,3 ]
Rao, C. N. R. [2 ,3 ,4 ]
机构
[1] JNCASR, Sch Adv Mat, Theoret Sci Unit, Bangalore 560064, India
[2] Jawaharlal Nehru Ctr Adv Sci Res, Sch Adv Mat SAMat, Bangalore 560064, India
[3] Jawaharlal Nehru Ctr Adv Sci Res, Sheikh Saqr Lab, Bangalore 560064, India
[4] JNCASR, Sch Adv Mat, New Chem Unit, Bangalore 560064, India
关键词
charge transfer; ferroelectrics; metavalent bonding; phase change materials; thermoelectrics; INFRARED EFFECTIVE CHARGE; PHASE-CHANGE MATERIALS; VI COMPOUNDS; CRYSTALLINE;
D O I
10.1002/adma.202208724
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A distinct type of metavalent bonding (MVB) is recently proposed to explain an unusual combination of anomalous functional properties of group IV chalcogenide crystals, whose electronic mechanisms and origin remain controversial. Through theoretical analysis of evolution of bonding along continuous paths in structural and chemical composition space, emergence of MVB in rocksalt chalcogenides is demonstrated as a consequence of weakly broken symmetry of parent simple-cubic crystals of Group V metalloids. High electronic degeneracy at the nested Fermi surface of parent metal drives spontaneous breaking of its translational symmetry with structural and chemical fields, which open up a small energy gap and mediate strong coupling between conduction and valence bands making metavalent crystals highly polarizable, conductive, and sensitive to bond-lengths. Stronger symmetry-breaking structural and chemical fields, however, transform them discontinuously to covalent and ionic semiconducting states. MVB involves bonding-antibonding pairwise interactions alternating along linear chains of at least five atoms, which facilitate long-range electron transfer in response to polar fields causing unusual properties. The precise picture of MVB predicts anomalous second-order Raman scattering as an addition to set off their unusual properties, and will guide in design of new metavalent materials with improved thermoelectric, ferroelectric and nontrivial electronic topological properties.
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页数:9
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