A Sensitivity-Enhanced Vertical-Resonant MEMS Electric Field Sensor Based on TGV Technology

被引：7

作者：

Gao, Yahao ^{[1
,2
]}

Peng, Simin ^{[1
,2
]}

Liu, Xiangming ^{[1
,2
]}

Liu, Yufei ^{[1
,2
]}

Zhang, Wei ^{[1
,2
]}

Peng, Chunrong ^{[1
,2
]}

Xia, Shanhong ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Aerosp Informat Res Inst, State Key Lab Transducer Technol, Beijing 100190, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

来源：

MICROMACHINES | 2024年 / 15卷 / 03期

基金：

中国国家自然科学基金;

关键词：

electric field sensor; MEMS; resonator; TGV technology; LEVEL;

D O I：

10.3390/mi15030356

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In order to enhance the sensitivity of wafer-level vacuum-packaged electric field sensors, this paper proposed a vertical-resonant MEMS electric field sensor based on TGV (Through Glass Via) technology. The microsensor is composed of the electric field sensing cover, the drive cover, and the SOI-based microstructures between them. TGV technology is innovatively used to fabricate the electric field sensing cover and the vertically-driven cover. The external electric field is concentrated and transmitted to the area below the silicon plate in the center of the electric field sensing cover through a metal plate and a metal pillar, reducing the coupling capacitance between the silicon plate and the packaging structure, thereby achieving the enhanced transmission of the electric field. The sensitivity-enhanced mechanism of the sensor is analyzed, and the key parameters of the sensor are optimized through finite element simulation. The fabrication process is designed and realized. A prototype is tested to characterize its performance. The experimental results indicate that the sensitivity of the sensor is 0.82 mV/(kV/m) within the electrostatic electric field ranging from 0-50 kV/m. The linearity of the sensor is 0.65%.

引用

页数：14

共 30 条

[21] Vacuum Steered-Electron Electric-Field Sensor [J].