On-Site Estimation of Thermal Resistance Degradation of Double-Sided Cooling (DSC) Power Modules Under Power Cycling Conditions

被引:1
作者
Chen, Yue [1 ]
Mei, Yun-Hui [2 ]
Ning, Puqi [3 ]
Lu, Guo-Quan [4 ]
机构
[1] Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300350, Peoples R China
[2] Tiangong Univ, Sch Elect Engn, Tianjin 300387, Peoples R China
[3] Chinese Acad Sci, Inst Elect Engn, Beijing 100190, Peoples R China
[4] Virginia Tech, Ctr Power Elect Syst, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24061 USA
基金
中国国家自然科学基金;
关键词
Double-sided cooling (DSC); power cycling; temperature estimation; thermal resistance; on-site; RELIABILITY; IMPEDANCE; WIRE;
D O I
10.1109/JESTPE.2023.3278453
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Double-sided cooling (DSC) power modules are increasingly used due to their superior cooling capability and low parasitic inductance. However, the DSC modules have multiple interconnections for heat dissipation, so it is challenging to accurately monitor the thermal resistance degradation of each interconnection under power cycling conditions. An estimation method considering the self-heating and thermal coupling effects of DSC power modules is proposed based on a traditional lumped resistor-capacitor (RC) thermal impedance network. The proposed method combining a recursive least squares (RLSs) algorithm with a thermal network model can well evaluate the thermal resistance of each interconnection and their variations on-site during power cycling tests. The lifetime of DSC power modules for power cycling tests could be overestimated if using the 20% increment in overall thermal resistance of DSC modules as a failure criterion.
引用
收藏
页码:4419 / 4429
页数:11
相关论文
共 27 条
  • [1] Bahman AS, 2014, 2014 INTERNATIONAL ELECTRONICS AND APPLICATION CONFERENCE AND EXPOSITION (PEAC), P1382, DOI 10.1109/PEAC.2014.7038066
  • [2] A Lumped Thermal Model Including Thermal Coupling and Thermal Boundary Conditions for High-Power IGBT Modules
    Bahman, Amir Sajjad
    Ma, Ke
    Blaabjerg, Frede
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (03) : 2518 - 2530
  • [3] A 3-D-Lumped Thermal Network Model for Long-Term Load Profiles Analysis in High-Power IGBT Modules
    Bahman, Amir Sajjad
    Ma, Ke
    Ghimire, Pramod
    Iannuzzo, Francesco
    Blaabjerg, Frede
    [J]. IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2016, 4 (03) : 1050 - 1063
  • [4] Bergman T. L., 2011, FUNDAMENTALS HEAT MA, V27
  • [5] Planar Power Module With Low Thermal Impedance and Low Thermomechanical Stress
    Cao, Xiao
    Lu, Guo-Quan
    Ngo, Khai D. T.
    [J]. IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2012, 2 (08): : 1247 - 1259
  • [6] Parametric Study of Joint Height for a Medium-Voltage Planar Package
    Cao, Xiao
    Wang, Tao
    Ngo, Khai D. T.
    Lu, Guo-Quan
    [J]. IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2010, 33 (03): : 553 - 562
  • [7] Chamund D. J., 2009, 2009 IEEE 6th International Power Electronics and Motion Control Conference, P274, DOI 10.1109/IPEMC.2009.5157398
  • [8] A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications
    Chang, Yao
    Li, Wuhua
    Luo, Haoze
    He, Xiangning
    Iannuzzo, Francesco
    Blaabjerg, Frede
    Lin, Weixing
    [J]. ENERGIES, 2019, 12 (07)
  • [9] High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module
    Chen, Yue
    Lei, Guangyin
    Lu, Guo-Quan
    Mei, Yun-Hui
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 966 - 971
  • [10] CYPRESS, 2015, UND TEMP SPEC