Field-Free Spin-Orbit Torque Driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current

被引：21

作者：

Kateel, Vaishnavi ^{[2
,3
]}

Krizakova, Viola ^{[1
]}

Rao, Siddharth ^{[2
]}

Cai, Kaiming ^{[2
]}

Gupta, Mohit ^{[2
]}

Monteiro, Maxwel Gama ^{[2
,3
]}

Yasin, Farrukh ^{[2
]}

Soree, Bart ^{[2
,3
]}

De Boeck, Johan ^{[2
,3
]}

Couet, Sebastien ^{[2
]}

Gambardella, Pietro ^{[1
]}

Kar, Gouri Sankar ^{[2
]}

Garello, Kevin ^{[2
,4
]}

机构：

[1] Swiss Fed Inst Technol, Dept Mat, CH-8093 Zurich, Switzerland

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Leuven, Belgium

[4] Univ Grenoble Alpes, CEA, CNRS, Grenoble INP,SPINTEC, F-38000 Grenoble, France

来源：

NANO LETTERS | 2023年 / 23卷 / 12期

基金：

瑞士国家科学基金会;

关键词：

field-free switching; spin-orbit torques; magnetic tunnel junction; memories; MRAM; spintronics; DYNAMICS; SYMMETRY;

D O I：

10.1021/acs.nanolett.3c00639

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Current-induced spin-orbit torques (SOTs) enablefast andefficient manipulation of the magnetic state of magnetic tunnel junctions(MTJs), making them attractive for memory, in-memory computing, andlogic applications. However, the requirement of the external magneticfield to achieve deterministic switching in perpendicularly magnetizedSOT-MTJs limits its implementation for practical applications. Here,we introduce a field-free switching (FFS) solution for the SOT-MTJdevice by shaping the SOT channel to create a "bend"in the SOT current. The resulting bend in the charge current createsa spatially nonuniform spin current, which translates into inhomogeneousSOT on an adjacent magnetic free layer enabling deterministic switching.We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecondtime scales. This proposed scheme is scalable, material-agnostic,and readily compatible with wafer-scale manufacturing, thus creatinga pathway for developing purely current-driven SOT systems.

引用

页码：5482 / 5489

页数：8

共 38 条

[1] Spin currents and spin-orbit torques in ferromagnetic trilayers [J].

Baek, Seung-heon C. ;

Amin, Vivek P. ;

Oh, Young-Wan ;

Go, Gyungchoon ;

Lee, Seung-Jae ;

Lee, Geun-Hee ;

Kim, Kab-Jin ;

Stiles, M. D. ;

Park, Byong-Guk ;

Lee, Kyung-Jin .

NATURE MATERIALS, 2018, 17 (06) :509-+

[2]

Baumgartner M, 2017, NAT NANOTECHNOL, V12, P980, DOI [10.1038/NNANO.2017.151, 10.1038/nnano.2017.151]

[3]

Cai KM, 2017, NAT MATER, V16, P712, DOI [10.1038/nmat4886, 10.1038/NMAT4886]

[4] Free Field Electric Switching of Perpendicularly Magnetized Thin Film by Spin Current Gradient [J].

Chen, Shaohai ;

Yu, Jihan ;

Xie, Qidong ;

Zhang, Xiangli ;

Lin, Weinan ;

Liu, Liang ;

Zhou, Jing ;

Shu, Xinyu ;

Guo, Rui ;

Zhang, Zongzhi ;

Chen, Jingsheng .

ACS APPLIED MATERIALS & INTERFACES, 2019, 11 (33) :30446-30452

[5] Spin-orbit torque magnetization switching of a three-terminal perpendicular magnetic tunnel junction [J].

Cubukcu, Murat ;

Boulle, Olivier ;

Drouard, Marc ;

Garello, Kevin ;

Avci, Can Onur ;

Miron, Ioan Mihai ;

Langer, Juergen ;

Ocker, Berthold ;

Gambardella, Pietro ;

Gaudin, Gilles .

APPLIED PHYSICS LETTERS, 2014, 104 (04)

[6]

Emori S, 2013, NAT MATER, V12, P611, DOI [10.1038/NMAT3675, 10.1038/nmat3675]

[7] Molecular-Spin-Qubit Noise Spectroscopy Through Dynamical Decoupling [J].

Fu, Yue ;

Wu, Yang ;

Dai, Yingqiu ;

Qin, Xi ;

Rong, Xing ;

Du, Jiangfeng .

PHYSICAL REVIEW APPLIED, 2021, 15 (06)

[8]

Garello K, 2019, SYMP VLSI CIRCUITS, pT194

[9]

Garello K, 2018, SYMP VLSI CIRCUITS, P81, DOI 10.1109/VLSIC.2018.8502269

[10] Ultrafast magnetization switching by spin-orbit torques [J].

Garello, Kevin ;

Avci, Can Onur ;

Miron, Ioan Mihai ;

Baumgartner, Manuel ;

Ghosh, Abhijit ;

Auffret, Stephane ;

Boulle, Olivier ;

Gaudin, Gilles ;

Gambardella, Pietro .

APPLIED PHYSICS LETTERS, 2014, 105 (21)

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