Material removal on silicon towards atomic and close-to-atomic scale by infrared femtosecond laser

被引：4
作者：
An, Haojie [1 ]
Wang, Jinshi [1 ]
Fang, Fengzhou [1 ,2 ]
机构：
[1] Tianjin Univ, State Key Lab Precis Measuring Technol & Instrumen, Lab Micro Nano Mfg Technol MNMT, Tianjin 300072, Peoples R China
[2] Univ Coll Dublin, Ctr Micro Nano Mfg Technol MNMT Dublin, Sch Mech & Mat Engn, Dublin, Ireland
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2023年 / 158卷
基金：
中国国家自然科学基金;
关键词：
Atomic and close-to-atomic scale; Laser ablation; Si; Simulation; ULTRASHORT PULSED-LASER; ABLATION PROCESS; SIMULATION; DAMAGE;
D O I：
10.1016/j.mssp.2023.107368
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ultrashort laser pulse is a widely used tool for high precision machining. However, the understanding on its minimum removal is still unclear. In this paper, single laser pulse (232 fs at 1030 nm) is used to study material removal of silicon from its (001) surface at near threshold fluence. The damage threshold, effective attenuation length, removal depth and ablation morphology are investigated systematically using atomic force microscopy. The minimum material removal of down to 1 nm is observed experimentally. A novel molecular dynamics method coupled with two temperature model is developed to reveal multiphoton ionization and explore the dynamic process. Results show that laser-induced plasma plays important role in the interaction process. The ablation crater is generated by plasma ejection and the outer rim around the crater is formed by the recoil pressure due to high pressure plasma expanding.
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页数：7
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