β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV

Lateral Schottky barrier diodes (SBD) were fabricated on a molecular beam epitaxy (MBE) grown, Si-doped beta-Ga2O3 wafer measuring 1 cm by 1.5 cm. These devices featured varying anode to cathode distances and included anode connected field plate structures. A device with a 25 mu m anode to cathode spacing exhibited a high breakdown voltage exceeding 3.6 kV. A smaller device with a 10 mu m anode to cathode spacing demonstrated a R-on,R-sp (specific on resistance) of 0.1508 Omega<middle dot>cm(2) and a power figure of merit of 18.87 MW/cm(2). The incorporation of titanium, characterized by a relatively low work function, as the Schottky contact enabled the achievement of a very low turn-on voltage and a sub-60 mV/dec subthreshold swing.