β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV

被引：1
|
作者：
Cho, Kyu Jun [1 ]
Chang, Woojin [1 ]
Lee, Hoon-Ki [1 ]
Mun, Jae Kyoung [1 ]
机构：
[1] Elect & Telecommun Res Inst, 218 Gajeong Ro, Daejeon 34129, South Korea
来源：
TRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS | 2024年 / 25卷 / 03期
基金：
新加坡国家研究基金会;
关键词：
beta-Ga2O3; Schottky barrier diode; Turn-on voltage; Schottky barrier; Breakdown voltage; Field plate;
D O I：
10.1007/s42341-024-00529-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lateral Schottky barrier diodes (SBD) were fabricated on a molecular beam epitaxy (MBE) grown, Si-doped beta-Ga2O3 wafer measuring 1 cm by 1.5 cm. These devices featured varying anode to cathode distances and included anode connected field plate structures. A device with a 25 mu m anode to cathode spacing exhibited a high breakdown voltage exceeding 3.6 kV. A smaller device with a 10 mu m anode to cathode spacing demonstrated a R-on,R-sp (specific on resistance) of 0.1508 Omega<middle dot>cm(2) and a power figure of merit of 18.87 MW/cm(2). The incorporation of titanium, characterized by a relatively low work function, as the Schottky contact enabled the achievement of a very low turn-on voltage and a sub-60 mV/dec subthreshold swing.
引用
收藏
页码：365 / 369
页数：5
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