Morphology Control of WS2 Nanoflakes Using Chemical Vapor Deposition for Improving the Photocatalytic Activity of the WS2/TiO2 Heterostructure

被引:3
|
作者
Thiehmed, Z. A. [1 ]
Altahtamouni, T. M. [1 ]
机构
[1] Qatar Univ, Coll Arts & Sci, Mat Sci & Technol Program, Doha 2713, Qatar
关键词
CONTROLLED GROWTH; MONOLAYER WS2; CVD GROWTH; MOS2; TEMPERATURE; DICHALCOGENIDES; TRANSITION; LAYERS;
D O I
10.1021/acs.jpcc.3c01836
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Chemical vapor deposition (CVD) is one of the successfultechniquesfor the synthesis of two-dimensional transition metal dichalcogenides(TMDCs) with different morphologies, sizes, and crystal qualities,which are beneficial for different research fields and applications.However, a controllable growth of 2D tungsten disulfide (WS2) with different orientations and sizes is still a challenging issue.In this study, we demonstrate a controllable synthesis of WS2 flakes by optimizing the CVD growth conditions. The results revealedthat tuning the growth pressure successfully provides control overthe orientation of the grown flakes. This monitoring allows for achievingvertically standing WS2 nanoflakes, with maximum exposureto the edge active sites. Aiming for enhanced photocatalytic activity,the construction of vertical WS2 nanoflake/TiO2 nanorod heterostructure was obtained by optimizing the height betweenthe precursor and the substrate, which provides control over the sizeof the flakes. In addition, the achieved WS2/TiO2 heterostructures were evaluated as a photocatalyst for RhodamineB degradation and photoelectrochemical activity (PEC).
引用
收藏
页码:11600 / 11608
页数:9
相关论文
共 50 条
  • [21] Conformal deposition of WS2 layered film by low-temperature metal-organic chemical vapor deposition
    Cho, K.
    Sawamoto, N.
    Machida, H.
    Ishikawa, M.
    Sudoh, H.
    Wakabayashi, H.
    Yokogawa, R.
    Ogura, A.
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SG)
  • [22] Synthesis of Freestanding WS2 Trees and Fibers on Au by Chemical Vapor Deposition (CVD)
    Sharma, Subash
    Jaisi, Balaram Paudel
    Sharma, Kamal Prasad
    Araby, Mona Ibrahim
    Kalita, Golap
    Tanemura, Masaki
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (01):
  • [23] Chemical Vapor Deposition Based Tungsten Disulfide (WS2) Thin Film Transistor
    Hussain, Aftab M.
    Sevilla, Galo A. Torres
    Rader, Kelly R.
    Hussain, Muhammad M.
    2013 SAUDI INTERNATIONAL ELECTRONICS, COMMUNICATIONS AND PHOTONICS CONFERENCE (SIECPC), 2013,
  • [24] ZnO-Controlled Growth of Monolayer WS2 through Chemical Vapor Deposition
    Xu, Zhuhua
    Lv, Yanfei
    Huang, Feng
    Zhao, Cong
    Zhao, Shichao
    Wei, Guodan
    MATERIALS, 2019, 12 (12)
  • [25] Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition
    Fu, Qi
    Wang, Wenhui
    Yang, Lei
    Huang, Jian
    Zhang, Jingyu
    Xiang, Bin
    RSC ADVANCES, 2015, 5 (21) : 15795 - 15799
  • [26] Theoretical aspects of WS2 nanotube chemical unzipping
    Kvashnin, D. G.
    Antipina, L. Yu.
    Sorokin, P. B.
    Tenne, R.
    Golberg, D.
    NANOSCALE, 2014, 6 (14) : 8400 - 8404
  • [27] Role of Defects in Tuning the Electronic Properties of Monolayer WS2 Grown by Chemical Vapor Deposition
    Yang, Jie
    Gordiichuk, Pavlo
    Zheliuk, Oleksandr
    Lu, Jianming
    Herrmann, Andreas
    Ye, Jianting
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2017, 11 (10):
  • [28] Photoluminescence characterization of the grain boundary thermal stability in chemical vapor deposition grown WS2
    Cai, Shuang
    Zhao, Weiwei
    Zafar, Amina
    Wu, Zhangting
    Tao, Yi
    Bi, Kedong
    Wei, Zhiyong
    Ni, Zhenhua
    Chen, Yunfei
    MATERIALS RESEARCH EXPRESS, 2017, 4 (10):
  • [29] Tuning carrier confinement in the MoS2/WS2 heterostructure
    Wang, Wei
    Gao, She-Sheng
    Meng, Yang
    SUPERLATTICES AND MICROSTRUCTURES, 2015, 88 : 12 - 17
  • [30] Enhanced photocatalytic activity of liquid phase exfoliated WS2 nanosheets
    Dahal, Arjun
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (23)