Atomic removal mechanism of nano polishing for single-crystal AlN substrate via molecular dynamics

被引:17
作者
He, Yan [1 ]
Sun, Jingting [2 ]
Gao, Peng [1 ]
Song, Shuyuan [1 ]
Wang, Kaiyuan [1 ]
Tang, Meiling [2 ]
机构
[1] Liaoning Petrochem Univ, Sch Mech Engn, Fushun 113001, Peoples R China
[2] Shenyang Univ Technol, Sch Mech Engn, Shenyang 110870, Peoples R China
关键词
Removal mechanism; Single-crystal AlN; Sliding; Rolling; Vibrating; Interaction; SILICA; GAN;
D O I
10.1016/j.mssp.2022.107294
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Molecular dynamics simulations were performed to research the microscopic atomic removal mechanism of diamond abrasive with sliding, rolling, vibrating and rolling & vibrating movements towards single-crystal AlN substrate. The influence of the sliding depth, sliding velocity, rotation axis, rolling velocity, amplitude and frequency of oscillations on atomic detachment, stacking, force, crystal structure evaluation, stress, radial dis-tribution function and atomic strain was revealed. The results show that stronger mechanical action normally gained more atomic detachment, stacking, amorphization and larger strains. The larger impact of abrasive on the AlN substrate can break more bonds and reduce the cutting force. However, the interaction times between the substrate and the abrasive is reduced due to the higher sliding velocity, which leads to the elastic recovery of the substrate atoms occur quickly. The elastic recovery of the substrate reduces the number of removed atoms, decreases the degree of amorphous structure, and relieves the stress concentration. The rolling movement in reverse y-axis obtains the largest number of atoms detached while in the y-axis obtains the smallest number of atoms stacked and damage. The vibrating movement creates the severest atomic disorder and damage, and highest the number of atoms detached and stacked than other forms of movement, and these characteristics also affected by amplitude and the frequency of oscillation. The rolling movement is beneficial to the release of re-sidual stress and the reduction of substrate damages. The vibrating movement makes it easier for the atoms to leave the initial lattice structure. Therefore, the rolling & vibrating movement produces relatively more atomic removal, less atomic stacking and damage. The adsorbed atoms on the surface of the abrasive and moved syn-chronously with the abrasive, showing higher temperature. In this study, the atomic removal behavior of AlN under different action forms of abrasive was systematically analyzed on the atomic scale, which provided theoretical guidance for the high-efficiency and low-damage processing of AlN.
引用
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页数:16
相关论文
共 45 条
[1]   Molecular dynamics investigations on polishing of a silicon wafer with a diamond abrasive [J].
Agrawal, Paras M. ;
Raff, L. M. ;
Bukkapatnam, S. ;
Komanduri, R. .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2010, 100 (01) :89-104
[2]   Plasma-Assisted MOCVD Growth of Non-Polar GaN and AlGaN on Si(111) Substrates Utilizing GaN-AlN Buffer Layer [J].
Arifin, Pepen ;
Sutanto, Heri ;
Sugianto, Agus ;
Subagio, Agus .
COATINGS, 2022, 12 (01)
[3]   Room-Temperature Quantum Emitter in Aluminum Nitride [J].
Bishop, Sam G. ;
Hadden, John P. ;
Alzahrani, Faris D. ;
Hekmati, Reza ;
Huffaker, Diana L. ;
Langbein, Wolfgang W. ;
Bennett, Anthony J. .
ACS PHOTONICS, 2020, 7 (07) :1636-1641
[4]   Material removal mechanism during porous silica cluster impact on crystal silicon substrate studied by molecular dynamics simulation [J].
Chen, Ruling ;
Jiang, Ranran ;
Lei, Hong ;
Liang, Min .
APPLIED SURFACE SCIENCE, 2013, 264 :148-156
[5]   Nano-machining of materials: understanding the process through molecular dynamics simulation [J].
Cui, Dan-Dan ;
Zhang, Liang-Chi .
ADVANCES IN MANUFACTURING, 2017, 5 (01) :20-34
[6]   Atomistic mechanisms of chemical mechanical polishing of diamond (100) in aqueous H2O2/pure H2O: Molecular dynamics simulations using reactive force field (ReaxFF) [J].
Guo, Xiaoguang ;
Yuan, Song ;
Wang, Xiaoli ;
Jin, Zhuji ;
Kang, Renke .
COMPUTATIONAL MATERIALS SCIENCE, 2019, 157 :99-106
[7]   Study micromechanism of surface planarization in the polishing technology using numerical simulation method [J].
Han, Xuesong .
APPLIED SURFACE SCIENCE, 2007, 253 (14) :6211-6216
[8]  
He Y., 2022, PROC IME C J MECH EN, P1
[9]   Investigation of the atomistic behavior in nanofinishing single-crystal aluminium nitride with hydroxyl radical •OH environment [J].
He, Yan ;
Tang, Meiling ;
Fan, Lin ;
Sun, Jingting ;
Gao, Xingjun .
COMPUTATIONAL MATERIALS SCIENCE, 2022, 214
[10]   Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H-SiC Wafers [J].
He, Yan ;
Yuan, Zewei ;
Song, Shuyuan ;
Gao, Xingjun ;
Deng, Wenjuan .
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING, 2021, 22 (05) :951-963