High-Performance Plasmonic Sensor Using Indium Nitride-Tungsten Disulphide Heterostructure for Bio-Sensing Applications

被引：1

作者：

Ashrafi, Tanwin Mohammad Salauddin ^{[1
]}

Mohanty, Goutam ^{[1
]}

机构：

[1] Lovely Profess Univ, Sch Chem Engn & Phys Sci, Dept Phys, Phagwara 144411, Punjab, India

来源：

IRANIAN JOURNAL OF SCIENCE | 2024年 / 48卷 / 01期

关键词：

Surface plasmon resonance; InN-TMDC heterostructure; Graphene; Sensitivity; INN FILMS; SURFACE; RESONANCE;

D O I：

10.1007/s40995-023-01577-6

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The performance of a surface plasmon resonance (SPR)-based sensor is investigated theoretically in the presence of a heterostructure composed of indium nitride (InN) and two-dimensional materials. The sensitivity of the four-layer SPR configuration (i.e. BK7 glass/silver/InN/sample medium) is found as 148.64 (0/RIU). After including the heterostructure, the sensitivity enhances by 2.979% for InN-graphene; however, InN-transition metal dichalcogenide (TMDC) provides superior performance. The InN-WS2 heterostructure provides the highest sensitivity among all with a value of 175.838 (0/RIU) which is 18.297% greater than the initial four-layer configuration. Additionally, the improved figure of merit and detection accuracy values are found as 71.771(RIU-1) and 1.135, respectively. The intensity of evanescent electric field at the interface is also maximum and its value is observed 1.73E-04 V/nm at resonance. As a result, the proposed sensor can be used to detect very small refractive index change and also be beneficial for bio-sensing applications.

引用

页码：255 / 259

页数：5

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