Harmonic analysis of CMOS low noise amplifier with employing PMOS IMD technique for biosensor applications

A narrowband cascode inductive degeneration CMOS low-noise amplifier (LNA) with post-distortion (PD) linearization technique is designed by TSMC CMOS 180 nm technology for biosensor applications. A mathematical formulation for linearity analysis is drafted using the Volterra series method. This paper presents a new combination of an intermodulation (IMD) technique using a PMOS IMD sinker with a broadband pie-matching network in the drain of the main transistor. The main NMOS transistor and the auxiliary PMOS transistor operated in the saturation region improve the second-order intercept point (IIP2) and third-order intercept point (IIP3). The cascode linearized LNA demonstrates the improvement of the third-order intercept point + 13 dBm using the linearization technique in the2.4 GHz ISM band frequency range. The effect of the linearization technique on the design constraints of the LNA, such as power gain, noise figures, stability, and maximum gain, is also investigated. The simulation results show that the LNA achieves a minimum noise figure (NF) of 1.803 dB, a maximum power gain (S-21) of 16.663 dB, and a low reflection coefficient (S-11) of - 32 dB with a good stability factor in the frequency range of 2.4 GHz.