Dielectric function of epitaxial quasi-freestanding monolayer graphene on Si-face 6H-SiC in a broad spectral range

被引:12
作者
Tikuisis, Kristupas Kazimieras [1 ]
Dubroka, Adam [2 ]
Uhlirova, Klara [1 ]
Speck, Florian [3 ]
Seyller, Thomas [3 ]
Losurdo, Maria [4 ]
Orlita, Milan [5 ]
Veis, Martin [1 ]
机构
[1] Charles Univ Prague, Fac Math & Phys, Ke Karlovu 2027-3, Prague 12116 2, Czech Republic
[2] Masaryk Univ, Fac Sci, Dept Condensed Matter Phys, Kotlarska 2, Brno 61137, Czech Republic
[3] Tech Univ Chemnitz, Inst Phys, Reichenhainer Str 70, D-09126 Chemnitz, Germany
[4] CNR NANOTEC, Inst Nanotechnol, Via Orabona 4, I-70126 Bari, Italy
[5] CNRS, Lab Natl Champs Magnet Intenses Grenoble, 25 Martyrs Ave,BP 166, F-38042 Grenoble 9, France
关键词
VAN-HOVE SINGULARITIES; OPTICAL-PROPERTIES; 1ST-PRINCIPLES;
D O I
10.1103/PhysRevMaterials.7.044201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a study of the optical properties of quasi-freestanding epitaxial monolayer graphene grown on the Si face of 6H-SiC (0001) in a broad spectral range from midinfrared to ultraviolet. After growth, the sample was intercalated by hydrogen in order to ensure that no dangling bonds between the substrate and graphene layer remain. Spectral dependence of the dielectric function of graphene was parametrized based on spectroscopic ellipsometry fits. We show that, from the viewpoint of optical properties, the investigated sample is very close to exfoliated graphene. We provide information about the spectral dependence of the complex dielectric function of quasi-freestanding graphene in a broad spectral range.
引用
收藏
页数:7
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共 40 条
  • [1] Optical and loss spectra of SiC polytypes from ab initio calculations
    Adolph, B
    Tenelsen, K
    Gavrilenko, VI
    Bechstedt, F
    [J]. PHYSICAL REVIEW B, 1997, 55 (03) : 1422 - 1429
  • [2] Ultrahigh electron mobility in suspended graphene
    Bolotin, K. I.
    Sikes, K. J.
    Jiang, Z.
    Klima, M.
    Fudenberg, G.
    Hone, J.
    Kim, P.
    Stormer, H. L.
    [J]. SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) : 351 - 355
  • [3] Visible to vacuum ultraviolet dielectric functions of epitaxial graphene on 3C and 4H SiC polytypes determined by spectroscopic ellipsometry
    Boosalis, A.
    Hofmann, T.
    Darakchieva, V.
    Yakimova, R.
    Schubert, M.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (01)
  • [4] Structural properties and dielectric function of graphene grown by high-temperature sublimation on 4H-SiC(000-1)
    Bouhafs, C.
    Darakchieva, V.
    Persson, I. L.
    Tiberj, A.
    Persson, P. O. A.
    Paillet, M.
    Zahab, A. -A.
    Landois, P.
    Juillaguet, S.
    Schoeche, S.
    Schubert, M.
    Yakimova, R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 117 (08)
  • [5] Excitonic Fano Resonance in Free-Standing Graphene
    Chae, Dong-Hun
    Utikal, Tobias
    Weisenburger, Siegfried
    Giessen, Harald
    von Klitzing, Klaus
    Lippitz, Markus
    Smet, Jurgen
    [J]. NANO LETTERS, 2011, 11 (03) : 1379 - 1382
  • [6] Extracting the complex optical conductivity of mono- and bilayer graphene by ellipsometry
    Chang, You-Chia
    Liu, Chang-Hua
    Liu, Che-Hung
    Zhong, Zhaohui
    Norris, Theodore B.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (26)
  • [7] Boron nitride substrates for high-quality graphene electronics
    Dean, C. R.
    Young, A. F.
    Meric, I.
    Lee, C.
    Wang, L.
    Sorgenfrei, S.
    Watanabe, K.
    Taniguchi, T.
    Kim, P.
    Shepard, K. L.
    Hone, J.
    [J]. NATURE NANOTECHNOLOGY, 2010, 5 (10) : 722 - 726
  • [8] Emtsev KV, 2009, NAT MATER, V8, P203, DOI [10.1038/nmat2382, 10.1038/NMAT2382]
  • [9] Space-time dispersion of graphene conductivity
    Falkovsky, L. A.
    Varlamov, A. A.
    [J]. EUROPEAN PHYSICAL JOURNAL B, 2007, 56 (04) : 281 - 284
  • [10] Development of graphene process control by industrial optical spectroscopy setup
    Fursenko, O.
    Lukosius, M.
    Lupina, G.
    Bauer, J.
    Villringer, C.
    Mai, A.
    [J]. MODELING ASPECTS IN OPTICAL METROLOGY VI, 2017, 10330