Enhanced Thermoelectric Performance of CoSb3 Thin Films by Ag and Ti Co-Doping

被引:6
作者
Wei, Meng [1 ]
Ma, Hong-Li [2 ]
Nie, Min-Yue [3 ]
Li, Ying-Zhen [1 ]
Zheng, Zhuang-Hao [1 ]
Zhang, Xiang-Hua [2 ]
Fan, Ping [1 ]
机构
[1] Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen Key Lab Adv Thin Films & Applicat, Key Lab Optoelect Devices & Syst,Minist Educ & Gu, Shenzhen 518060, Peoples R China
[2] Univ Rennes, Inst Sci Chim Rennes, CNRS, ISCR, F-35000 Rennes, France
[3] BASIS Int Sch Pk Lane Harbour, Huizhou 516000, Peoples R China
基金
中国国家自然科学基金;
关键词
CoSb3; thin film; co-doping; thermoelectric properties; FILLED SKUTTERUDITES; TRANSPORT-PROPERTIES;
D O I
10.3390/ma16031271
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The Skutterudites CoSb3 material has been the focus of research for the conversion applications of waste heat to electricity due to its ability to accommodate a large variety of ions in the cages that have been proven effective in improving the thermoelectric performance. Although the co-doped CoSb3 bulk materials have attracted increasing attention and have been widely studied, co-doped CoSb3 thin films have been rarely reported. In this work, Ag and Ti were co-doped into CoSb3 thin films via a facile in situ growth method, and the influence of doping content in the thermoelectric properties was investigated. The results show that all the Ag and Ti co-doped CoSb3 thin films contain a pure well-crystallized CoSb3 phase. Compared to the un-doped thin film, the co-doped samples show simultaneous increase in the Seebeck coefficient and the electrical conductivity, leading to a distinctly enhanced power factor. The high power factor value can reach similar to 0.31 mWm(-1)K(-2) at 623 K after appropriate co-doping, which is two times the value of the un-doped thin film we have been obtained. All the results show that the co-doping is efficient in optimizing the performance of the CoSb3 thin films; the key point is to control the doping element content so as to obtain high thermoelectric properties.
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页数:9
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