Controllable Growth of 2D V3S5 Single Crystal by Chemical Vapor Deposition

被引:14
作者
Wang, Ping [1 ]
Feng, Qi [1 ]
Dong, Weikang [1 ]
Kong, Denan [1 ]
Yang, Yang [1 ]
Jia, Lin [1 ]
Liu, Jijian [1 ]
Zhao, Chunyu [1 ]
Guo, Dan [1 ]
Tian, Ruifeng [1 ]
Zheng, Shoujun [1 ]
Duan, Junxi [1 ]
Zhou, Jiadong [1 ,2 ]
机构
[1] Beijing Inst Technol, Ctr Quantum Phys, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Measu, Beijing 100081, Peoples R China
[2] Beijing Inst Technol, Adv Res Inst Multidisciplinary Sci, Beijing 100081, Peoples R China
基金
中国国家自然科学基金;
关键词
chemical vapor deposition; nonstoichiometric; phase transitions; V3S5; vanadium chalcogenides; VANADIUM DISULFIDE NANOSHEETS; SULFIDES; V5S8;
D O I
10.1002/adfm.202308356
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D intercalated vanadium chalcogenides have attracted intensive interest based on their physical properties and potential applications. However, controllable synthesis of the intercalated vanadium chalcogenides via chemical vapor deposition is still a big challenge. Here, a binary metal precursor co-reaction growth mechanism to manipulate the evaporation rate of vanadium precursors is reported, thus the intercalated 2D V1+ XS2 - V3S5 single crystal can be controllably synthesized. The quality of 2D V3S5 nanosheets is identified by Raman spectroscopy and high-resolution scanning transmission electron microscopy. Interestingly, a phase transition in 2D metallic V3S5 nanosheets is observed at 20 K. Meanwhile, the resistance upturn and unsaturated negative magnetoresistance induced by electron-electron interaction is confirmed. This work proposes a new strategy to synthesize the 2D intercalated VxSy single crystals with different compositions for studying their excellent properties and potential applications.
引用
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页数:7
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