Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

被引:9
作者
Kwon, Woong [1 ]
Kawasaki, Seiya [1 ]
Watanabe, Hirotaka [2 ]
Tanaka, Atsushi [2 ]
Honda, Yoshio [2 ]
Ikeda, Hirotaka [3 ]
Iso, Kenji [2 ]
Amano, Hiroshi [2 ]
机构
[1] Nagoya Univ, Grad Sch Engn, Dept Elect Engn, Nagoya, Aichi 4648603, Japan
[2] Nagoya Univ, Inst Mat & Syst Sustainabil, Nagoya, Aichi 4648601, Japan
[3] Mitsubishi Chem Corp, Gallium Nitride Technol Ctr, Ushiku, Ibaraki 3001295, Japan
关键词
Gallium nitride (GaN); p-n diode; dislocation; thermionic emission; Poole-Frenkel emission;
D O I
10.1109/LED.2023.3274306
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The reverse leakage mechanism of threading dislocation (TD)-free gallium nitride (GaN) vertical p-n diode was investigated in various temperature range, and it was compared with that of the p-n diode having a threading dislocation density (TDD) of around 10(6) cm(-2). The reverse leakage current was increased markedly by increasing the temperature from 400 K, the dominant mechanism was explained by thermionic and Poole-Frenkel emissions for TD-free and high-TDD p-n diodes, respectively. At high temperatures and electric fields, the leakage current of the high TDD p-n diode showed 2 times higher than the TD-free p-n diode. These results indicate that the performance of vertical GaN devices, especially when employed at high temperatures and electric fields, can be enhanced by removing TDs.
引用
收藏
页码:1172 / 1175
页数:4
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