Demonstration of B-ion-implanted p-BaSi2/n-Si heterojunction solar cells

被引：3

作者：

Aonuki, Sho ^{[1
]}

Narita, Shunsuke ^{[1
]}

Takayanagi, Kaori ^{[1
]}

Iwai, Ai ^{[1
]}

Yamashita, Yudai ^{[1
]}

Toko, Kaoru ^{[2
]}

Suemasu, Takashi ^{[2
]}

机构：

[1] Univ Tsukuba, Grad Sch Sci & Technol, Degree programs Pure & Appl Sci, Tsukuba, Ibaraki 3058573, Japan

[2] Univ Tsukuba, Fac Pure & Appl Sci, Dept Appl Phys, Tsukuba, Ibaraki 3058573, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2023年 / 62卷 / SD期

关键词：

solar cell; ion implantation; BaSi2; post-annealing; activation; SEMICONDUCTING BASI2 FILMS; EPITAXIAL-GROWTH; THIN-FILMS;

D O I：

10.35848/1347-4065/acab08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The implantation of B atoms into BaSi2 epitaxial films grown by molecular beam epitaxy was performed to form p-type BaSi2 films. It was revealed by Raman spectroscopy that the ion-implantation damage induced in the implanted BaSi2 films was recovered by post-annealing at 600 degrees C or higher temperatures for 64 min. The hole concentration increased up to 3.1 x 10(18) cm(-3) at room temperature, indicating that B-ion-implanted p-BaSi2 films are applicable as a hole transport layer. The B-ion-implanted p-BaSi2/n-Si heterojunction solar cells showed rectifying current-voltage characteristics under AM1.5 G illumination and the internal quantum efficiency reached 72% at the wavelength of 900 nm. The conversation efficiency was 2.2%. These results open new routes for the formation methods of BaSi2 solar cells.

引用

页数：6

共 55 条

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[2]

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