ZnO with p-Type Doping: Recent Approaches and Applications

被引：30

作者：

Yang, Ruqi ^{[1
]}

Wang, Fengzhi ^{[1
,2
]}

Lu, Jianguo ^{[1
,2
]}

Lu, Yangdan ^{[1
]}

Lu, Bojing ^{[1
]}

Li, Siqin ^{[1
]}

Ye, Zhizhen ^{[1
,2
]}

机构：

[1] University, Sch Mat Sci & Engn, State Key Lab Silicon & Adv Semicond Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Inst Wenzhou, Wenzhou Key Lab Novel Optoelect & Nano Mat, Wenzhou 325006, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2023年 / 5卷 / 08期

关键词：

ZnO; p-type conduction; doping concentration; acceptor level; self-compensation; LIGHT-EMITTING-DIODES; THIN-FILMS; DUAL IMPLANTATION; FORMATION MECHANISM; OXYGEN VACANCIES; TEMPERATURE; HOMOJUNCTION; FABRICATION; NITROGEN; NANORODS;

D O I：

10.1021/acsaelm.3c00515

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnOis a significant semiconductor material with the characteristicsof direct band gap, large exciton binding energy, and easy growthof high-quality nanostructures, and it is widely used in various fields.However, obtaining high-quality p-type ZnO has become a significantobstacle to the wide application of ZnO. The research on p-ZnO startedseveral decades ago and is regarded as the research focus. Many researchershave obtained high-quality p-ZnO by chemical vapor deposition (CVD)and physical vapor deposition (PVD). To obtain high-quality p-ZnO,researchers have used some "better" techniques to improvethe crystal quality and mobility of p-ZnO, such as molecular beamepitaxy (MBE) and post-treatment. This review provides an overviewof some methods for obtaining high-quality p-ZnO, such as increasingthe acceptor concentration, shallowing acceptor energy levels, andreducing donor defects. In addition, we also review the applicationsof p-ZnO in LEDs, UV detectors, thin-film transistors, gas sensing,bionic materials, and other fields.

引用

页码：4014 / 4034

页数：21

共 114 条

[31] Fabrication of p-Type ZnO: N Films by Oxidizing Zn3N2 Films in Oxygen Plasma at Low Temperature [J].