Characterization of GaN Power Amplifier Using 5G mm-Wave Modulated Signals

被引：1
|
作者：
Letailleur, L. [1 ,2 ]
Villegas, M. [1 ]
Al Hajjar, A. [2 ]
Kacou, C. Edoua [2 ]
机构：
[1] Univ Gustave Eiffel, CNRS, ESYCOM, F-77454 Marne La Vallee, France
[2] OMMIC SAS, F-94450 Limeil Brevannes, France
来源：
2023 IEEE TOPICAL CONFERENCE ON RF/MICROWAVE POWER AMPLIFIERS FOR RADIO AND WIRELESS APPLICATIONS | 2023年
关键词：
Power amplifiers; Gallium Nitride; Millimeter wave measurements; 5G mobile communication;
D O I：
10.1109/PAWR56957.2023.10046272
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a characterization of a GaN power amplifier (PA) for 5G FR2 base station applications is presented. The PA has an output power greater than 40 dBm with a PAE of 33%. The characterization starts with the classic single tone measurements. Then, after selecting and justifying a backoff, a characterization with 256QAM 5G FR2 signals with 100 and 50 MHz bandwidth is performed. ACPR and EVM are measured in compliance with 5G FR2 standard. Finally, the AM/AM and AM/PM characteristics are analyzed to determine the most suitable linearization technique for a overall performance/consumption trade-off. This work is a preliminary study to develop a 5G FR2 massive MIMO transmitter.
引用
收藏
页码：4 / 6
页数：3
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