Parameter extraction method for Cauer model considering dynamic thermal diffusion boundaries in IGBT module

被引:5
作者
Dong, Chao [1 ]
Hu, Jingwei [1 ]
Du, Mingxing [1 ]
机构
[1] Tianjin Univ Technol, Tianjin Key Lab Control Theory & Applicat Complica, Tianjin, Peoples R China
关键词
IGBT; Circular thermal diffusion boundary; Cauer model; Parameter extraction; SOLDER;
D O I
10.1016/j.mejo.2022.105643
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Considering the change of working conditions, the calculation of thermal resistance and thermal capacity with the fixed shape of heat conduction area will result in a large calculation error for junction temperature of the Cauer model. Based on the conventional Cauer model, a circular heat conduction area is chosen to calculate the thermal resistance and thermal capacity in this manuscript, which avoids the inaccurate calculation of heat conduction area under different working conditions by the fixed heat diffusion angle method. In addition, a few fiber grating sensors are arranged on the baseplate to track the selected isotherm in real time, and update the isotherm as the thermal diffusion boundary according to the simulation rule. Furthermore, accurate thermal resistance and thermal capacity values are calculated online according to the circular heat conduction area that its boundary is the selected isotherm. Finally, the correction of the Cauer model with real-time updated thermal resistance and thermal capacity can calculate a more accurate junction temperature.
引用
收藏
页数:12
相关论文
共 17 条
[1]   A High-Precision Adaptive Thermal Network Model for Monitoring of Temperature Variations in Insulated Gate Bipolar Transistor (IGBT) Modules [J].
An, Ning ;
Du, Mingxing ;
Hu, Zhen ;
Wei, Kexin .
ENERGIES, 2018, 11 (03)
[2]   Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters-A Review [J].
Avenas, Yvan ;
Dupont, Laurent ;
Khatir, Zoubir .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2012, 27 (06) :3081-3092
[3]  
Brückner T, 2005, IEEE IND APPLIC SOC, P106
[4]   Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance [J].
Cao, Xiao ;
Wang, Tao ;
Ngo, Khai D. T. ;
Lu, Guo-Quan .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2011, 1 (04) :495-501
[5]   Experimental validation of a thermal modelling method dedicated to multichip power modules in operating conditions [J].
Carubelli, S ;
Khatir, Z .
MICROELECTRONICS JOURNAL, 2003, 34 (12) :1143-1151
[6]   Bond wire lift-off monitoring based on intersection point movement characteristic in IGBT module [J].
Du, Mingxing ;
Xin, Jinlei ;
Wang, Hongbin ;
Ouyang, Ziwei ;
Wei, Kexin .
MICROELECTRONICS JOURNAL, 2021, 116
[7]   An Improved Cauer Model of IGBT Module: Inclusive Void Fraction in Solder Layer [J].
Du, Mingxing ;
Guo, Qiuya ;
Wang, Hongbin ;
Ouyang, Ziwei ;
Wei, Kexin .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2020, 10 (08) :1401-1410
[8]   Investigations on junction temperature estimation based on junction voltage measurements [J].
Khatir, Z. ;
Dupont, L. ;
Ibrahim, A. .
MICROELECTRONICS RELIABILITY, 2010, 50 (9-11) :1506-1510
[9]   Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules [J].
Luo, Haoze ;
Chen, Yuxiang ;
Sun, Pengfei ;
Li, Wuhua ;
He, Xiangning .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (07) :5122-5132
[10]  
Pedersen KB, 2017, INT RELIAB PHY SYM