Mn-Incorporated α-Fe2O3 Nanostructured Thin Films: Facile Synthesis and Application as a High-Performance Supercapacitor

被引:22
作者
Kadam, Sujit A. [1 ]
Ma, Yuan-Ron [1 ]
Chen, Yan-Ruei [2 ]
Navale, Yuvraj H. [3 ]
Salunkhe, Amol S. [3 ]
Patil, Vikas B. [3 ]
Ralegankar, Sachin D. [4 ]
More, Pravin D. [4 ]
机构
[1] Natl Dong Hwa Univ, Dept Phys, Hualien 97401, Taiwan
[2] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu, Taiwan
[3] Punyashlok Ahilyadevi Holkar Solapur Univ, Sch Phys Sci, Funct Mat Res Lab, Solapur 413255, MS, India
[4] Ahmednagar Coll, Dept Phys, Ahmednagar 414001, MS, India
关键词
Spray pyrolysis technique; Mn:alpha-Fe2O3 nanostructure; contact angle; electrochemical analysis; supercapacitor; ELECTRODE; NANOFLAKES; FABRICATION;
D O I
10.1007/s11664-022-10019-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Among all the transition metal oxides, iron oxide-based materials are excellent for supercapacitor performance. Here, Mnincorporated alpha-Fe2O3 (Mnm-Fe2O3) nanostructured thin films (with 3%, 5%, and 7% Mn) are prepared via spray pyrolysis. All the synthesized nanostructured thin films are characterized by x-ray diffraction (XRD), optical study, Fourier transform infrared spectroscopy (FTIR), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), and contact angle for the structural, optical, morphological and wettability analysis, respectively. The band gap of Mn:alpha-Fe2O3 nanostructured thin films is tuned by changing Mn concentration. The increasing Mn concentration shifts the valance band edge towards the conduction band edge, reducing the band gap. The linear band gap decrease of 0.44 eV with the addition of Mn concentration, along with the band gap reduction, affects supercapacitive performance. The prepared 7% Mn:alpha-Fe2O3 nanostructured electrode exhibits excellent specific capacitance of 688.6 F g(-1) at a scan rate of 5 mV s(-1) in 1 M Na2SO4 electrolyte, energy density (6 Wh kg(-1)), and power density (12 kW kg(-1)) at a current density of 5 mA g(-1).
引用
收藏
页码:500 / 513
页数:14
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