Modeling the characteristics of avalanche photodiodes based on Ge/Si

被引：0

作者：

Khomyakova, K. I. ^{[1
]}

Deeb, H. ^{[1
]}

Lozovoy, K. A. ^{[1
]}

Kokhanenko, A. P. ^{[1
]}

机构：

[1] Natl Res Tomsk State Univ, Tomsk, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 03期

关键词：

optoelectronics; avalanche photodiode; impact ionization; planar structure; gain-bandwidth product;

D O I：

10.18721/JPM.163.141

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

hkris05@yandex.ru Abstract. In this article, the planar structure of an avalanche photodiode based on Ge/Si is designed. The dependences of the gain and bandwidth on the bias voltage for different thicknesses of the absorption and multiplication layers of an avalanche photodiode based on Ge/Si are presented.

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页码：232 / 236

页数：5

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