Growth and characterization of organic 4-hydroxybenzophenone single crystals for nonlinear optical applications

The organic material 4-hydroxybenzophenone single crystal was grown by slow evaporation solution growth technique. The lattice parameter, space group, and crystal structure of the grown crystal were confirmed using single crystal X-ray diffraction (XRD) studies. The presence of various functional groups were identified using FTIR and FT -Raman spectra studies. The optical properties of the grown crystal were analyzed by using UV-Vis studies. The cut-off wavelength was observed around 357 nm. The dielectric studies of the grown 4-hydroxybenzophenone crystal were analyzed using the parallel plate capacitor method. The electronic properties such as the Plasma energy, Penn gap, Fermi energy, and the electronic polarizability were calculated. The laser damage threshold value of the grown 4-hydroxybenzophenone crystal has been determined using an Nd:YAG laser operating at 532 nm. The nonlinear optical properties of the grown 4-hydroxybenzophenone crystal was analyzed by the Z -scan technique.