Leakage Mechanism and Cycling Behavior of Ferroelectric Al0.7Sc0.3N

被引:7
|
作者
Chen, Li [1 ]
Wang, Qiang [2 ]
Liu, Chen [1 ]
Li, Minghua [1 ]
Song, Wendong [1 ]
Wang, Weijie [1 ]
Loke, Desmond K. [2 ]
Zhu, Yao [1 ]
Sanson, Andrea
机构
[1] Inst Microelect, Agcy Sci Technol & Res ASTAR, Singapore 138634, Singapore
[2] Singapore Univ Technol & Design, Dept Sci Math & Technol, Singapore 487372, Singapore
关键词
AlScN; ferroelectric; leakage; cycling; P-F emission; DFT calculation; DEFECTS;
D O I
10.3390/ma17020397
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ferroelectric scandium-doped aluminum nitride (Al1-xScxN) is of considerable research interest because of its superior ferroelectricity. Studies indicate that Al1-xScxN may suffer from a high leakage current, which can hinder further thickness scaling and long-term reliability. In this work, we systematically investigate the origin of the leakage current in Al0.7Sc0.3N films via experiments and theoretical calculations. The results reveal that the leakage may originate from the nitrogen vacancies with positively charged states and fits well with the trap-assisted Poole-Frenkel (P-F) emission. Moreover, we examine the cycling behavior of ferroelectric Al0.7Sc0.3N-based FeRAM devices. We observe that the leakage current substantially increases when the device undergoes bipolar cycling with a pulse amplitude larger than the coercive electric field. Our analysis shows that the increased leakage current in bipolar cycling is caused by the monotonously reduced trap energy level by monitoring the direct current (DC) leakage under different temperatures and the P-F emission fitting.
引用
收藏
页数:12
相关论文
共 50 条
  • [1] Leakage Mechanism of Ferroelectric Al0.7Sc0.3N Ultra-thin Film
    Chen, Li
    Wang, Zichu
    Liu, Chen
    Li, Minghua
    Song, Wendong
    Wang, Weijie
    Varghese, Binni
    Lee, Hock Koon
    Lin, Huamao
    Zhu, Yao
    2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF, 2023,
  • [2] High-Temperature Ferroelectric Behavior of Al0.7Sc0.3N
    Drury, Daniel
    Yazawa, Keisuke
    Zakutayev, Andriy
    Hanrahan, Brendan
    Brennecka, Geoff
    MICROMACHINES, 2022, 13 (06)
  • [3] Low leakage current in heteroepitaxial Al0.7Sc0.3N ferroelectric films on GaN
    Yazawa, Keisuke
    Evans, Charles
    Dickey, Elizabeth C.
    Tellekamp, M. Brooks
    Brennecka, Geoff L.
    Zakutayev, Andriy
    PHYSICAL REVIEW APPLIED, 2025, 23 (01):
  • [4] Stress effect on the leakage current distribution of ferroelectric Al0.7Sc0.3N across the wafer
    Yang, Wanwang
    Chen, Li
    Li, Minghua
    Liu, Fei
    Liu, Xiaoyan
    Liu, Chen
    Kang, Jinfeng
    APPLIED PHYSICS LETTERS, 2023, 123 (13)
  • [5] Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films
    Shibukawa, Ryota
    Tsai, Sung-Lin
    Hoshii, Takuya
    Wakabayashi, Hitoshi
    Tsutsui, Kazuo
    Kakushima, Kuniyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2022, 61 (SH)
  • [6] The Effect of Molybdenum Grain Characteristics on Ferroelectric Al0.7Sc0.3N Film Properties
    Li, Minghua
    Lin, Huamao
    Varghese, Binni
    Zhu, Yao
    2023 IEEE INTERNATIONAL SYMPOSIUM ON APPLICATIONS OF FERROELECTRICS, ISAF, 2023,
  • [7] Characterization of Ferroelectric Al0.7Sc0.3N Thin Film on Pt and Mo Electrodes
    Nie, Ran
    Shao, Shuai
    Luo, Zhifang
    Kang, Xiaoxu
    Wu, Tao
    MICROMACHINES, 2022, 13 (10)
  • [8] High-Temperature Acoustic and Electric Characterization of Ferroelectric Al0.7Sc0.3N Films
    Wang, Jialin
    Park, Mingyo
    Ansari, Azadeh
    JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2022, 31 (02) : 234 - 240
  • [9] Reduced coercive field in epitaxial thin film of ferroelectric wurtzite Al0.7Sc0.3N
    Yazawa, Keisuke
    Drury, Daniel
    Zakutayev, Andriy
    Brennecka, Geoff L.
    APPLIED PHYSICS LETTERS, 2021, 118 (16)
  • [10] Sputter Process Optimization for Al0.7Sc0.3N Piezoelectric Films
    Felmetsger, Valeriy
    Mikhov, Mikhail
    Ramezani, Mehrdad
    Tabrizian, Roozbeh
    2019 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS), 2019, : 2600 - 2603