Experimental study on femtosecond laser ablation of 4H-SiC substrate

Silicon carbide (SiC) is an ideal substrate for manufacturing high-power electronic devices and microwave devices and has broad application prospects. The surface treatment of SiC wafers plays a critical role and faces challenges in the semiconductor industry. Among the multiple treatment methods, the laser-based method has gradually attracted the attention of scholars. Therefore, this research uses a femtosecond laser to ablate 4H-SiC sliced wafers and analyzes the influence of key parameters, such as laser pulse energy, defocus amount, repetition frequency, and scanning intervals, on the laser ablation depth, width, and surface morphology. Scanning electron microscopy and laser coherence-focused microscopy were used to characterize the laser ablation surface. When the defocus amount was 6 mm, the microgroove profile formed by the laser was U-shaped. The scanning interval parameters had to be optimized to obtain the optimized surface roughness. The results show that the optimized surface roughness (S-alpha ) was 0.267 mu m, and brittle fracture areas such as microcracks and pits on the original surface were removed. Effective removal facilitates further material surface processing, which provides valuable insights for similar researchers and benefits for the semiconductor industry.