Deterministic Thermal Sculpting of Large-Scale 2D Semiconductor Nanocircuits

被引:7
作者
Giordano, Maria Caterina [1 ]
Zambito, Giorgio [1 ]
Gardella, Matteo [1 ]
de Mongeot, Francesco Buatier [1 ]
机构
[1] Univ Genoa, Phys Dept, Via Dodecaneso 33, I-16146 Genoa, Italy
关键词
additive nanolithography; few-layer MoS2 nanocircuits; Kelvin probe nanoscopy; large-area 2D TMD semiconductors; thermal-scanning probe lithography; MONOLAYER MOS2; ULTRAFAST;
D O I
10.1002/admi.202201408
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
2D transition metal dichalcogenide semiconductor (TMDs) nanocircuits are deterministically engineered over large-scale substrates. This original additive nanolithography approach combines large-area physical growth of 2D TMDs layer with high resolution thermal-scanning probe lithography, to reshape the ultra-thin semiconducting layers at the nanoscale level. The additive nanofabrication of few-layer MoS2 nanostructures of controlled thickness, grown in the 2H-semiconducting phase, is demonstrated as shown by their Raman vibrational fingerprints and by their optoelectronic response. The electronic signatures of the MoS2 nanostructures are locally identified by Kelvin probe force microscopy providing chemical and compositional contrast at the nanometer scale. Finally, the potential role of the 2D TMDs nanocircuits as building blocks of deterministic 2D semiconducting interconnections is demonstrated by high-resolution local conductivity maps showing the competitive transport properties of these large-area nanolayers. This work thus provides a powerful approach to scalable nanofabrication of 2D nano-interconnects and van der Waals heterostructures, and to their integration in real-world ultra-compact electronic and photonic nanodevices.
引用
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页数:7
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共 65 条
[21]   Sheet Resistance Reduction of MoS2 Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing [J].
Hamada, Takuya ;
Tomiya, Shigetaka ;
Tatsumi, Tetsuya ;
Hamada, Masaya ;
Horiguchi, Taiga ;
Kakushima, Kuniyuki ;
Tsutsui, Kazuo ;
Wakabayashi, Hitoshi .
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 :278-285
[22]   Moire Patterns in 2D Materials: A Review [J].
He, Feng ;
Zhou, Yongjian ;
Ye, Zefang ;
Cho, Sang-Hyeok ;
Jeong, Jihoon ;
Meng, Xianghai ;
Wang, Yaguo .
ACS NANO, 2021, 15 (04) :5944-5958
[23]   Etching Techniques in 2D Materials [J].
He, Ting ;
Wang, Zhen ;
Zhong, Fang ;
Fang, Hehai ;
Wang, Peng ;
Hu, Weida .
ADVANCED MATERIALS TECHNOLOGIES, 2019, 4 (08)
[24]   Recent progress of TMD nanomaterials: phase transitions and applications [J].
Huang, H. H. ;
Fan, Xiaofeng ;
Singh, David J. ;
Zheng, W. T. .
NANOSCALE, 2020, 12 (03) :1247-1268
[25]   Controlled MoS2 layer etching using CF4 plasma [J].
Jeon, Min Hwan ;
Ahn, Chisung ;
Kim, HyeongU ;
Kim, Kyong Nam ;
LiN, Tai Zhe ;
Qin, Hongyi ;
Kim, Yeongseok ;
Lee, Sehan ;
Kim, Taesung ;
Yeom, Geun Young .
NANOTECHNOLOGY, 2015, 26 (35)
[26]   Work function variation of MoS2 atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules [J].
Kim, Jong Hun ;
Lee, Jinhwan ;
Kim, Jae Hyeon ;
Hwang, C. C. ;
Lee, Changgu ;
Park, Jeong Young .
APPLIED PHYSICS LETTERS, 2015, 106 (25)
[27]   Wafer-scale and deterministic patterned growth of monolayer MoS2via vapor-liquid-solid method [J].
Li, Shisheng ;
Lin, Yung-Chang ;
Liu, Xu-Ying ;
Hu, Zehua ;
Wu, Jing ;
Nakajima, Hideaki ;
Liu, Song ;
Okazaki, Toshiya ;
Chen, Wei ;
Minari, Takeo ;
Sakuma, Yoshiki ;
Tsukagoshi, Kazuhito ;
Suenaga, Kazu ;
Taniguchi, Takaaki ;
Osada, Minoru .
NANOSCALE, 2019, 11 (34) :16122-16129
[28]   Thermomechanical Nanostraining of Two-Dimensional Materials [J].
Liu, Xia ;
Sachan, Amit Kumar ;
Howell, Samuel Tobias ;
Conde-Rubio, Ana ;
Knoll, Armin W. ;
Boero, Giovanni ;
Zenobi, Renato ;
Brugger, Jurgen .
NANO LETTERS, 2020, 20 (11) :8250-8257
[29]   Thermomechanical Nanocutting of 2D Materials [J].
Liu, Xia ;
Howell, Samuel Tobias ;
Conde-Rubio, Ana ;
Boero, Giovanni ;
Brugger, Juergen .
ADVANCED MATERIALS, 2020, 32 (31)
[30]   A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications [J].
Liu, Yuchun ;
Gu, Fuxing .
NANOSCALE ADVANCES, 2021, 3 (08) :2117-2138