Strategic heating for growing perovskite single crystals

被引:1
作者
Lu, Chengchangfeng [1 ]
Wang, Ruotao [2 ]
Xu, Sheng [1 ,2 ,3 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
[2] Univ Calif San Diego, Dept Nanoengn, La Jolla, CA 92093 USA
[3] Univ Calif San Diego, Dept Mat Sci & Engn, La Jolla, CA 92093 USA
关键词
Compendex;
D O I
10.1016/j.matt.2023.05.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The development of perovskite-based high-performance optoelectronic devices requires the growth and fabrication of perovskite single-crystal thin films (PeSCTFs). Recently, scientists at the Southern University of Science and Technology demonstrated a new crystal growth strategy that achieved PeSCTFs on transport layers with a high area-to-thickness ratio by using gradient heating nucleation and room temperature growth. The resulting formamidinium lead bromide PeSCTFs exhibit a record low trap density and high carrier mobility. This method can be potentially applied to PeSCTFs of various compositions on different transport layers, making it a versatile technology for developing high-performance perovskite optoelectronics.
引用
收藏
页码:2537 / 2539
页数:3
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