Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

被引：0
|
作者：
Karaborchev, A. A. [1 ]
Makhov, I. S. [1 ]
Maximov, M. V. [2 ]
Kryzhanovskaya, N. V. [1 ]
Zhukov, A. E. [1 ]
机构：
[1] HSE Univ, St Petersburg, Russia
[2] Alferov Univ, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期
基金：
俄罗斯科学基金会;
关键词：
Two-state lasing; quantum dots; microdisks; electroluminescence;
D O I：
10.18721/JPM.161.327
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper reports on the implementation of two-level lasing in injection micro -lasers with self-organized InAs/GaAs quantum dots. Emission bands related to the radiative electron-hole recombination involving ground and several excited states of quantum dots are observed in the spontaneous electroluminescence spectra. We investigated two-level lasing via the ground and first excited states of quantum dots in microdisks with different cavity diame-ters. A decrease in the threshold currents is observed for both ground and first excited transi-tions in quantum dots with a decrease in the microdisk diameter. The temperature dependences of the threshold current density for microdisks of various diameters suggest that two-level lasing is observed up to 90-100 & DEG;C.
引用
收藏
页码：157 / 162
页数：6
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