Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

被引：0
|
作者：
Karaborchev, A. A. [1 ]
Makhov, I. S. [1 ]
Maximov, M. V. [2 ]
Kryzhanovskaya, N. V. [1 ]
Zhukov, A. E. [1 ]
机构：
[1] HSE Univ, St Petersburg, Russia
[2] Alferov Univ, St Petersburg, Russia
来源：
ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期
基金：
俄罗斯科学基金会;
关键词：
Two-state lasing; quantum dots; microdisks; electroluminescence;
D O I：
10.18721/JPM.161.327
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The paper reports on the implementation of two-level lasing in injection micro -lasers with self-organized InAs/GaAs quantum dots. Emission bands related to the radiative electron-hole recombination involving ground and several excited states of quantum dots are observed in the spontaneous electroluminescence spectra. We investigated two-level lasing via the ground and first excited states of quantum dots in microdisks with different cavity diame-ters. A decrease in the threshold currents is observed for both ground and first excited transi-tions in quantum dots with a decrease in the microdisk diameter. The temperature dependences of the threshold current density for microdisks of various diameters suggest that two-level lasing is observed up to 90-100 & DEG;C.
引用
收藏
页码：157 / 162
页数：6
相关论文
共 50 条
  • [21] Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip
    Yue, Pengyi
    Dou, Xiuming
    Su, Xiangbin
    Niu, Zhichuan
    Sun, Baoquan
    JOURNAL OF SEMICONDUCTORS, 2018, 39 (08)
  • [22] Room-temperature optically pumped InAs/GaAs quantum dots microdisk lasers on SiO2/Si chip
    Pengyi Yue
    Xiuming Dou
    Xiangbin Su
    Zhichuan Niu
    Baoquan Sun
    Journal of Semiconductors, 2018, 39 (08) : 57 - 60
  • [23] Lasing characteristics of InAs/GaAs quantum dot lasers with multistacked dot layer
    Qian, J., 2005, Science Press (26):
  • [24] Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon
    A. E. Zhukov
    E. I. Moiseev
    A. M. Nadtochii
    A. S. Dragunova
    N. V. Kryzhanovskaya
    M. M. Kulagina
    A. M. Mozharov
    S. A. Kadinskaya
    O. I. Simchuk
    F. I. Zubov
    M. V. Maximov
    Technical Physics Letters, 2020, 46 : 783 - 786
  • [25] Lasing of Injection Microdisks with InAs/InGaAs/GaAs Quantum Dots Transferred to Silicon
    Zhukov, A. E.
    Moiseev, E. I.
    Nadtochii, A. M.
    Dragunova, A. S.
    Kryzhanovskaya, N. V.
    Kulagina, M. M.
    Mozharov, A. M.
    Kadinskaya, S. A.
    Simchuk, O. I.
    Zubov, F. I.
    Maximov, M. V.
    TECHNICAL PHYSICS LETTERS, 2020, 46 (08) : 783 - 786
  • [26] Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
    E. I. Moiseev
    M. V. Maximov
    N. V. Kryzhanovskaya
    O. I. Simchuk
    M. M. Kulagina
    S. A. Kadinskaya
    M. Guina
    A. E. Zhukov
    Semiconductors, 2020, 54 : 263 - 267
  • [27] Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
    Moiseev, E. I.
    Maximov, M. V.
    Kryzhanovskaya, N. V.
    Simchuk, O. I.
    Kulagina, M. M.
    Kadinskaya, S. A.
    Guina, M.
    Zhukov, A. E.
    SEMICONDUCTORS, 2020, 54 (02) : 263 - 267
  • [28] Microdisk lasers - Quantum-dot lasing and bistability
    Baba, T
    Ide, T
    Ishii, S
    Nakagawa, A
    Tatebayashi, J
    Iwamoto, S
    Nakaoka, T
    Arakawa, Y
    NOVEL IN-PLANE SEMICONDUCTOR LASERS IV, 2005, 5738 : 295 - 302
  • [29] Lasing from InGaAs quantum dots in an injection microdisk
    Zhang, LD
    Hu, E
    APPLIED PHYSICS LETTERS, 2003, 82 (03) : 319 - 321
  • [30] Two State Lasing in InAs/GaAs Dots; The Role of the Bimodal Size Distribution
    O'Driscoll, I.
    Smowton, P. M.
    Blood, P.
    22ND IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, 2010, : 77 - 78
12345