Multi-state lasing in microdisk lasers with InAs/GaAs quantum dots

被引：0

作者：

Karaborchev, A. A. ^{[1
]}

Makhov, I. S. ^{[1
]}

Maximov, M. V. ^{[2
]}

Kryzhanovskaya, N. V. ^{[1
]}

Zhukov, A. E. ^{[1
]}

机构：

[1] HSE Univ, St Petersburg, Russia

[2] Alferov Univ, St Petersburg, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2023年 / 16卷 / 01期

基金：

俄罗斯科学基金会;

关键词：

Two-state lasing; quantum dots; microdisks; electroluminescence;

D O I：

10.18721/JPM.161.327

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The paper reports on the implementation of two-level lasing in injection micro -lasers with self-organized InAs/GaAs quantum dots. Emission bands related to the radiative electron-hole recombination involving ground and several excited states of quantum dots are observed in the spontaneous electroluminescence spectra. We investigated two-level lasing via the ground and first excited states of quantum dots in microdisks with different cavity diame-ters. A decrease in the threshold currents is observed for both ground and first excited transi-tions in quantum dots with a decrease in the microdisk diameter. The temperature dependences of the threshold current density for microdisks of various diameters suggest that two-level lasing is observed up to 90-100 & DEG;C.

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收藏

页码：157 / 162

页数：6

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