Interfacial engineering of ZnS passivating contacts for crystalline silicon solar cells achieving 20% efficiency

被引：9

作者：

Wang, Yanhao ^{[1
,2
]}

Gu, Zeyu ^{[1
]}

Li, Le ^{[1
]}

Liu, Siyi ^{[1
]}

Li, Jingjie ^{[3
]}

Lu, Linfeng ^{[1
]}

Li, Xiaodong ^{[4
]}

Liu, Wenzhu ^{[4
]}

Liu, Ronglin ^{[5
]}

Chen, Jia ^{[5
]}

Wang, Yichen ^{[6
]}

Zhang, Shan-Ting ^{[7
]}

Li, Dongdong ^{[1
,2
,7
]}

机构：

[1] Chinese Acad Sci, Shanghai Adv Res Inst, Interdisciplinary Res Ctr, 99 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China

[2] Univ Chinese Acad Sci, Sch Integrated Circuits, 19 Yuquan Rd, Beijing 100049, Peoples R China

[3] Beijing Univ Technol, Fac Mat & Mfg, Beijing 100124, Peoples R China

[4] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr New Energy Technol, Shanghai 201800, Peoples R China

[5] Jolywood Taizhou Solar Technol Co Ltd, 6 Kaiyang Rd, Taizhou 225500, Jiangsu, Peoples R China

[6] Shanghai Weiyu Int Sch, Weiyu Rd, Shanghai 200231, Peoples R China

[7] Zhangjiang Lab, 100 Haike Rd,Zhangjiang Hitech Pk, Shanghai 201210, Peoples R China

来源：

MATERIALS TODAY ENERGY | 2023年 / 35卷

基金：

上海市自然科学基金;

关键词：

Crystalline silicon solar cells; Dopant-free passivating contacts; Zinc sulfide; Surface passivation; Forming gas annealing; ELECTRON-SELECTIVE CONTACTS; DOPANT-FREE; HETEROJUNCTION; OXIDE; PHOTOVOLTAICS;

D O I：

10.1016/j.mtener.2023.101336

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Despite the widespread use of metal oxides as electron selective contacts (ESCs) in dopant-free passivating contact crystalline silicon (c-Si) solar cells, their stability and performance improvements still encounter bottlenecks. Herein, we investigated the potential of zinc sulfide (ZnS) as ESC for n-type cSi (n-Si) solar cells. The performance of the ZnS-based dopant-free n-Si solar cells has been optimized by deploying the low-work-function Mg/Ag stack electrode and a SiOx passivation interlayer with forming gas annealing (FGA) treatment. An efficiency of 20.03% has been achieved for n-Si solar cells with SiOx(FGA)/ZnS/Mg/Ag contact, which is so far the highest efficiency reported for ZnS-based c-Si solar cells. Moreover, the device maintained & GE;98% of its initial efficiency after being stored in the air for 30 days, indicating the promise of long-term deployment. Our work highlights the great potential of using metal sulfides as high-performance and stable passivating contacts in dopant-free c-Si solar cells. & COPY; 2023 Elsevier Ltd. All rights reserved.

引用

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