Distribution optimization of thermal through-silicon via for 3D chip based on thermal-mechanic coupling

被引:13
作者
Guan, Xiaonan [1 ]
Xi, Kun [1 ]
Xie, Zhihui [1 ]
Zhang, Jian [1 ]
Lu, Zhuoqun [1 ]
Ge, Yanlin [2 ,3 ]
机构
[1] Naval Univ Engn, Coll Power Engn, Wuhan 430033, Peoples R China
[2] Wuhan Inst Technol, Inst Thermal Sci & Power Engn, Wuhan 430205, Peoples R China
[3] Wuhan Inst Technol, Sch Mech & Elect Engn, Wuhan 430205, Peoples R China
关键词
3D chip; Thermal design; Multi -physics field coupling; Thermal through -silicon via; Electronics cooling; INTEGRATED-CIRCUITS; TSV; ELECTRONICS; STRESS; HEAT; COMPONENTS;
D O I
10.1016/j.mejo.2023.105723
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study establishes a unit cell model of thermal-mechanical coupling of 3D chip thermal through-silicon via (TTSV), and conducts optimization study under the constraints of the given ratio of total unit cell volume to TTSV volume. A single-degree-of-freedom optimization study with TTSV spacing as the design variable was first carried out to analyze the impact laws of heat flow density in the hot spot region, TTSV filling material and volume share on the optimal structure and maximum temperature. The results of the two-degree-of-freedom optimization with TTSV spacing and TTSV array rotation angle as design variables were further investigated to determine the distribution of thermal stresses. The maximum temperature of the cell decreases and then increases with the increase in the TTSV pitch, regardless of the rotation angle of the TTSV array, and there exists a minimum value. The higher the temperature, the higher the thermal stress. Thermal stress is always concentrated in the inner and edge regions of the TTSV.
引用
收藏
页数:8
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