Enhanced energy storage properties and large electrostrictive effect of Bi0.35Na0.35Ba0.09Sr0.21Ti(1-x)(Al0.5Nb0.5)xO3 relaxor ceramics

被引:16
|
作者
Yang, Fan [1 ]
Li, Qiang [1 ]
Zhang, Ao [1 ]
Jia, Yuxin [1 ]
Wang, Weijia [1 ]
Fan, Huiqing [1 ]
机构
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
关键词
(Bi0.5Na0.5)TiO3-based relaxor ceramics; Energy storage properties; High efficiency; Electrostrictive effect; Dielectric temperature stability; FERROELECTRIC PROPERTIES; ELECTRICAL-PROPERTIES; EXCELLENT STABILITY; PHASE-TRANSITION; DENSITY; STRAIN; PERFORMANCE; OPTIMIZATION; EFFICIENCY; EVOLUTION;
D O I
10.1016/j.ceramint.2022.10.106
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Ferroelectric ceramics have good piezoelectric and ferroelectric properties and can be used for energy storage equipment and actuators. Nevertheless, current research on dielectric capacitors has only focused on the energy storage density, but ignored efficiency. Moreover, conventional piezoelectric materials have a large strain hys-teresis. In this work, (Al0.5Nb0.5)(4+) (AN) complex ions doped 0.7Bi(0.5)Na(0.5)TiO(3)-0.3Ba(0.3)Sr(0.7)TiO(3) (BNBST) ce-ramics were prepared. Doping AN destroyed the long-range ordered ferroelectric domains and generated polar nano regions, resulting in a gradual thinning and inclination of polarization hysteresis loops and an increase in relaxor degree. For BNBST-3AN ceramics, a W-rec of 1.52 J/cm(3) and a eta of 92.1% were achieved at 150 kV/cm. Meanwhile, BNBST-3AN ceramics had good energy storage temperature stability and cycling performance. The AN doping reduced the strain hysteresis in BNBST ceramics. BNBST-2AN ceramics exhibited a longitudinal electrostrictive coefficient Q(33) similar to 0.0292 m(4)/C-2 and a field-induced strain of 0.25% with low strain hysteresis (6.67%). Furthermore, BNBST-4AN ceramics had superior dielectric temperature stability from 24 to 270 degrees C. All results show that BNBST-100xAN ceramics have great promise for energy storage devices and actuators.
引用
收藏
页码:6068 / 6076
页数:9
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