Tunable surface magnetism by gate voltage in a slab of nonmagnetic half-Heusler compound CoTiSb

被引：1
|
作者：
Sun, He [1 ]
Jiang, Liwei [1 ]
Zheng, Yisong [1 ]
机构：
[1] Jilin Univ, Coll Phys, Key Lab Phys & Technol Adv Batteries, Minist Educ, Changchun 130012, Peoples R China
来源：
JOURNAL OF CHEMICAL PHYSICS | 2023年 / 158卷 / 06期
基金：
中国国家自然科学基金;
关键词：
THERMOELECTRIC PROPERTIES; EXCHANGE INTERACTIONS; INTRINSIC FERROMAGNETISM; ALLOY; DYNAMICS; SEMICONDUCTOR; METAL; TRANSITION; INTERFACE; LAYERS;
D O I：
10.1063/5.0136807
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electrical manipulation of magnetization is appealing to the relevant experiment and spintronic device. In this paper, we focus on the electrical and magnetic properties of a thin film cleaved from the nonmagnetic half-Heusler compound CoTiSb. By means of the first-principles calculations, we find that the surface of TiSb termination possesses ferrimagnetism with a magnetic moment of 0.35 (0.49) mu(B) per unit cell without (with) Hubbard U, which can persist below the Curie temperature of 48 (54) K. What is more, such a surface magnetism can be tuned to nonmagnetism by gate-induced hole doping with a concentration of 2.83 x 10(14) (3.55 x 10(14)) cm(-2). This magnetic tunability of the CoTiSb slab provides a platform to realize the pseudo-spin valve with both the magnetic electrodes and nonmagnetic space layer made of the same material without hetero-interfaces.
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页数：8
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