Energy-Efficient Exact and Approximate CNTFET-Based Ternary Full Adders

被引:5
作者
Malik, Aiman [1 ]
Hussain, Md Shahbaz [1 ]
Hasan, Mohd. [1 ]
机构
[1] Aligarh Muslim Univ, ZH Coll Engn & Technol, Dept Elect Engn, Aligarh, India
关键词
Approximate computing; CNTFET; MVL logic; Ternary full adder; Ternary circuit; TRANSISTORS INCLUDING NONIDEALITIES; COMPACT SPICE MODEL; HIGH-PERFORMANCE; DESIGN; VOLTAGE;
D O I
10.1007/s00034-023-02589-8
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Ternary circuits are promising due to their lower interconnect complexity, storage requirement, and lesser pin count than binary circuits. The adder is one of the most important building blocks of a digital processor. This paper proposes carbon nanotube field effect transistor (CNTFET)-based 'exact' and 'approximate' ternary full adders (TFA). The CNTFET is attractive for realizing multi-valued logic (MVL)/ternary circuits because its threshold voltage can be changed by altering the diameter of its carbon nanotube (CNT). The exact ternary adders are realized using unary functions and multiplexers. The circuit size of only the 'Sum' block of a TFA is pruned in approximate ternary full adders by varying degrees for achieving superior performance in terms of transistor count, delay, and power consumption compared to the 'exact' TFAs. This performance gain in approximate TFAs is obtained at the cost of accuracy in some of the 'Sum' outputs. Circuits are simulated with HSPICE using a 32 nm CNTFET technology node at various supply voltages and temperatures. The proposed exact adders exhibit lower power consumption and transistor count, higher robustness, and lower power delay product (PDP) and energy delay product (EDP) than existing ternary adders. The improvement in PDP of the proposed exact TFAs varies from 20 to 96% compared to existing TFAs. The performance of the exact TFAs is then further improved by approximating its 'Sum' block in approximate TFAs. Image blending is used to demonstrate the effectiveness of approximate ternary adders in error-tolerant applications.
引用
收藏
页码:2982 / 3003
页数:22
相关论文
共 33 条
[1]   An efficient GNRFET-based circuit design of ternary half-adder [J].
Abbasian, Erfan ;
Orouji, Maedeh ;
Anvari, Sana Taghipour .
AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2023, 170
[2]   GNRFET- and CNTFET-Based Designs of Highly Efficient 22 T Unbalanced Single-Trit Ternary Multiplier Cell [J].
Abbasian, Erfan ;
Aminzadeh, Alireza ;
Taghipour Anvari, Sana .
ARABIAN JOURNAL FOR SCIENCE AND ENGINEERING, 2023, 48 (11) :15337-15352
[3]   New designs of fault-tolerant adders in quantum-dot cellular automata [J].
Ahmadpour, Seyed-Sajad ;
Mosleh, Mohammad .
NANO COMMUNICATION NETWORKS, 2019, 19 :10-25
[4]  
[Anonymous], 2008, Stanford University CNTFET model
[5]   An Energy- and Area-Efficient Approximate Ternary Adder Based on CNTFET Switching Logic [J].
Bastani, Narges Hajizadeh ;
Moaiyeri, Mohammad Hossein ;
Navi, Keivan .
CIRCUITS SYSTEMS AND SIGNAL PROCESSING, 2018, 37 (05) :1863-1883
[6]  
Das D, 2018, POLITICS OF SWIDDEN FARMING: ENVIRONMENT AND DEVELOPMENT IN EASTERN INDIA, P1
[7]   A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - Part II: Full device model and circuit performance benchmarking [J].
Deng, Jie ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3195-3205
[8]   A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application - Part I: Model of the intrinsic channel region [J].
Deng, Jie ;
Wong, H. -S. Philip .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (12) :3186-3194
[9]   High performance, variation-tolerant CNFET ternary full adder a process, voltage, and temperature variation-resilient design [J].
Firouzi, Samane ;
Tabrizchi, Sepehr ;
Sharifi, Fazel ;
Badawy, Abdel-Hameed .
COMPUTERS & ELECTRICAL ENGINEERING, 2019, 77 :205-216
[10]  
Guo J., 2006, International Journal of High Speed Electronics and Systems, V16, P897