Virtual Work Principle for Piezoelectric Semiconductors and Its Application on Extension and Bending of ZnO Nanowires

被引:9
作者
Chen, Jingbo [1 ]
Zhang, Gongye [2 ]
Li, Dongbo [3 ]
Qu, Yilin [1 ,4 ]
机构
[1] Ningbo Inst NPU, Unmanned Vehicle Innovat Ctr, Ningbo 315048, Peoples R China
[2] Southeast Univ, Sch Civil Engn, Jiangsu Key Lab Engn Mech, Nanjing 210096, Peoples R China
[3] Xian Univ Architecture & Technol, Sch Sci, Xian 710055, Peoples R China
[4] Northwestern Polytech Univ, Sch Marine Sci & Technol, Xian 710072, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
principle of virtual work; piezoelectric semiconductors; Bernoulli-Euler beam theory; extension; bending; POWER; MECHANICS;
D O I
10.3390/cryst13091368
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper presents the principle of virtual work (PVW) for piezoelectric semiconductors (PSs), which extends the piezoelectric dielectrics to involve the semiconducting effect. As an application of the PVW, a one-dimensional (1D) approximation theory for the extension and bending of PS nanowires is established by directly applying the PVW and Bernoulli-Euler beam theory with the aid of the second-order approximation of electrostatic potential. To illustrate the new model, the mechanical displacement, electrostatic potential, and concentration of electrons for extension and bending deformation of n-type ZnO nanowires are analytically determined. Additionally, numerical results show that, for n-type Zinc Oxide nanowires, the distribution of electrostatic potential is anti-symmetric along the thickness direction for extension deformation. In contrast, the bending deformation causes a symmetric distribution of electrostatic potential characterized by the zeroth-order and the second-order electrostatic potential. Furthermore, these two different deformations result in the redistribution of electrons. The electrostatic potential can be tuned by adjusting the amplitude of the applied mechanical load. Moreover, we find that the increase in doping level will reduce the magnitude of electrostatic potential due to the screening effect. The presented PVW provides a general approach to establishing structural theories and an effective way of implementing numerical methods.
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页数:17
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