Extremely high heat flux dissipation and hotspots removal with nature-inspired single-phase microchannel heat sink designs

被引:10
作者
Li, Yu-Ting [1 ,2 ]
Zhao, Shanshan [3 ]
Zhang, Kai [3 ]
Lu, Gui [1 ]
Li, Yuanyuan [1 ]
机构
[1] North China Elect Power Univ, Sch Energy Power & Mech Engn, Beijing 102206, Peoples R China
[2] Xi An Jiao Tong Univ, Sch Energy & Power Engn, Xian 710049, Shanxi, Peoples R China
[3] China Acad Launch Vehicle Technol, Beijing 100076, Peoples R China
基金
中国国家自然科学基金;
关键词
Ultra -high heat flux; Pyramid thermal dissipation; Nature-inspired topology; Hotspot; Single phase; THERMAL-CONDUCTIVITY; ACCELERATOR TARGETS; JET IMPINGEMENT; 2-PHASE FLOW; ELECTRONICS; PERFORMANCE; COMPOSITES; ENHANCEMENT; MANAGEMENT;
D O I
10.1016/j.applthermaleng.2023.121282
中图分类号
O414.1 [热力学];
学科分类号
摘要
A novel pyramid thermal dissipation unity with conduction-convection coupling thermal dissipation and nature-inspired hotspot removal channel heat sinks is proposed to degrade and dissipate ultra-high heat flux with the order of 103 W cm(-2) by using single-phase coolant. A 3D conjugate thermal and flow numerical model is used to validate the feasibility of the proposed ultra-high heat flux dissipation method. The pyramid thermal dissipation unit consists of a spiral tube embedded with etched lotus leaf vein or snowflake-shaped channels. This config-uration enables the dissipation of heat fluxes ranging from 1000 to 1500 W cm(-2) while maintaining safe operating temperatures for the chip using a single-phase coolant. By utilizing high thermal conductivity mate-rials, the proposed dissipation unit achieves chip working temperatures of 89.89 degrees C for 1500 W cm(-2) and 66.58 degrees C for 1000 W cm(-2). Furthermore, the new design allows for a reduction in the minimum required thermal conductivity for materials to 700 W m(-1 )K(-1) at a pump power of 7.05 W, while still operating within the chip's safe temperature limit of < 120 <degrees>C. This expanded range of thermal conductivity values provides more options for selecting suitable materials to fabricate the dissipation unit.
引用
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页数:12
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