Numerical modeling of gas-phase reactions of tetraethoxysilane/O2/Ar atmospheric dielectric barrier discharge for deposition

被引：2

作者：

Chang, Jiaxin ^{[1
]}

Dai, Dong ^{[1
,4
]}

Kong, Fei ^{[2
]}

Shao, Tao ^{[2
,3
]}

机构：

[1] South China Univ Technol, Sch Elect Power, Guangzhou, Peoples R China

[2] Chinese Acad Sci, Inst Elect Engn, Beijing Int S&T Cooperat Base Plasma Sci & Energy, Beijing, Peoples R China

[3] Univ Chinese Acad Sci, Beijing, Peoples R China

[4] South China Univ Technol, Sch Elect Power, Guangzhou 510641, Peoples R China

来源：

PLASMA PROCESSES AND POLYMERS | 2023年 / 20卷 / 07期

基金：

中国国家自然科学基金;

关键词：

atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD); numerical modeling; tetraethoxysilane (TEOS); CHEMICAL-VAPOR-DEPOSITION; SURFACE-CHARGE; SILICON DIOXIDE; CROSS-SECTIONS; COLLISION PROCESSES; PLASMA; PRESSURE; IONIZATION; OXYGEN/TETRAETHOXYSILANE; HYDROCARBONS;

D O I：

10.1002/ppap.202200178

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A chemical kinetic model is developed to study the decomposition of tetraethoxysilane (TEOS) in O-2/Ar atmospheric pressure dielectric barrier discharge and compared with gas chromatography and optical emission spectroscopy results. The calculations indicate that the excited Ar dominates the fragmentation of TEOS in the absence of oxygen and mainly breaks the carbon-carbon bonds in TEOS. However, in the presence of oxygen, the primary decomposition process of TEOS is the substitution of ethoxy (-OC2H5) by hydroxyl (-OH). The variation of these two reactions with oxygen composition could explain the transition of the deposition layer from organic to norganic. The model and its results provide a theoretical basis for further modeling and regulating the quality of the deposition layer.

引用

页数：18

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