Ablation characteristics and material removal mechanism of a 8-Ga2O3 processed by picosecond laser

beta-Ga2O3, as an emerging wide bandgap semiconductor material, has been attracting much attention in recent years. To promote the progress of beta-Ga2O3 in laser processing, microchannels were fabricated on the surface of beta-Ga2O3 using picosecond laser, and the surface morphology and internal structure of the microchannels were characterized. Rastering on a beta-Ga2O3 substrate created surface nanostructures including laser-induced periodic surface structures (LIPSS) at a low spatial frequency (period 861 similar to 958 nm). These highly aligned periodic structures can be controlled by laser scanning speed. In addition, the ablation threshold of single pulse is extended to multi-pulse ablation threshold, which is more in line with the actual processing requirements. The interaction mechanism between ultrashort pulse laser and beta-Ga2O3 is discussed using a two-temperature model (TTM).