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- [21] Excitonic Insulator State in Ta2NiSe5 Probed by Photoemission SpectroscopyPHYSICAL REVIEW LETTERS, 2009, 103 (02)Wakisaka, Y.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Phys, Chiba 2778561, Japan Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanSudayama, T.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Phys, Chiba 2778561, Japan Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanTakubo, K.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Phys, Chiba 2778561, Japan Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanMizokawa, T.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Phys, Chiba 2778561, Japan Univ Tokyo, Dept Complex Sci & Engn, Chiba 2778561, Japan Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanArita, M.论文数: 0 引用数: 0 h-index: 0机构: Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanNamatame, H.论文数: 0 引用数: 0 h-index: 0机构: Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanTaniguchi, M.论文数: 0 引用数: 0 h-index: 0机构: Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, Higashihiroshima 7390046, Japan Hiroshima Univ, Grad Sch Sci, Higashihiroshima 7398526, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanKatayama, N.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Adv Mat, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanNohara, M.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Adv Mat, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, JapanTakagi, H.论文数: 0 引用数: 0 h-index: 0机构: Univ Tokyo, Dept Adv Mat, Chiba 2778561, Japan Univ Tokyo, Dept Phys, Chiba 2778561, Japan
- [22] Strong interband interaction in the excitonic insulator phase of Ta2NiSe5PHYSICAL REVIEW B, 2019, 99 (07)Lee, Jinwon论文数: 0 引用数: 0 h-index: 0机构: Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Phys, Pohang 37673, South Korea Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaKang, Chang-Jong论文数: 0 引用数: 0 h-index: 0机构: Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaEom, Man Jin论文数: 0 引用数: 0 h-index: 0机构: Pohang Univ Sci & Technol, Dept Phys, Pohang 37673, South Korea Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaKim, Jun Sung论文数: 0 引用数: 0 h-index: 0机构: Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Pohang Univ Sci & Technol, Dept Phys, Pohang 37673, South Korea Inst Basic Sci IBS, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea论文数: 引用数: h-index:机构:论文数: 引用数: h-index:机构:
- [23] Examination of Nonlinear Conductivity on the Excitonic Insulator Candidate Ta2NiSe5JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2020, 89 (04)Nakano, Akitoshi论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanMaruoka, Urara论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanTaniguchi, Hiroki论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan论文数: 引用数: h-index:机构:
- [24] Exciton Transport in the Electron-Hole System Ta2NiSe5JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 2019, 88 (11)Nakano, Akitoshi论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanNagai, Takayuki论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Tokyo Inst Technol, Mat Res Ctr Element Strategy, Yokohama, Kanagawa 2268503, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanKatayama, Naoyuki论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanSawa, Hiroshi论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Appl Phys, Nagoya, Aichi 4648603, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, JapanTaniguchi, Hiroki论文数: 0 引用数: 0 h-index: 0机构: Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan Nagoya Univ, Dept Phys, Nagoya, Aichi 4648602, Japan论文数: 引用数: h-index:机构:
- [25] Defect-mediated structural phase transition in Ta2NiSe5 visualized via in situ TEMMATERIALS CHARACTERIZATION, 2024, 214Wang, Yizhe论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, State Key Lab Featured Met Mat & Life cycle Safety, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaYan, Shanshan论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, State Key Lab Featured Met Mat & Life cycle Safety, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaWang, He论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, State Key Lab Featured Met Mat & Life cycle Safety, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaSu, Jiaqi论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, State Key Lab Featured Met Mat & Life cycle Safety, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaHuang, Yi论文数: 0 引用数: 0 h-index: 0机构: Hunan Univ, Analyt Instrumentat Ctr, Changsha 410082, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaMa, Chao论文数: 0 引用数: 0 h-index: 0机构: Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Hunan, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R ChinaLi, Zian论文数: 0 引用数: 0 h-index: 0机构: Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, State Key Lab Featured Met Mat & Life cycle Safety, Nanning 530004, Guangxi, Peoples R China Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Guangxi, Peoples R China
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- [27] Electrical Tuning of the Excitonic Insulator Ground State of Ta2NiSe5PHYSICAL REVIEW LETTERS, 2019, 123 (20)Fukutani, Keisuke论文数: 0 引用数: 0 h-index: 0机构: Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaStania, Roland论文数: 0 引用数: 0 h-index: 0机构: Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaJung, Jiwon论文数: 0 引用数: 0 h-index: 0机构: Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaSchwier, Eike F.论文数: 0 引用数: 0 h-index: 0机构: Hiroshima Univ, Hiroshima Synchrotron Radiat Ctr, 2-313 Kagamiyama, Hiroshima, Japan Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea论文数: 引用数: h-index:机构:Kwon, Chang Il论文数: 0 引用数: 0 h-index: 0机构: Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South KoreaKim, Jun Sung论文数: 0 引用数: 0 h-index: 0机构: Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea Pohang Univ Sci & Technol POSTECH, Dept Phys, Pohang 37673, South Korea Inst for Basic Sci Korea, Ctr Artificial Low Dimens Elect Syst, Pohang 37673, South Korea论文数: 引用数: h-index:机构:
- [28] Ta2NiSe5: A candidate topological excitonic insulator with multiple band inversionsPHYSICAL REVIEW B, 2022, 105 (03)Ma, Xiaobo论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaWang, Guangwei论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaMao, Huican论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaYuan, Zhihong论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaYu, Tianye论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaLiu, Rui论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaPeng, Yiran论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaZheng, Pengyu论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R ChinaYin, Zhiping论文数: 0 引用数: 0 h-index: 0机构: Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
- [29] Effects of thickness, temperature and substrate on phonon anisotropy in layered Ta2NiSe5MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2024, 310Li, Si-Na论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaZhou, Jun-Jie论文数: 0 引用数: 0 h-index: 0机构: Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaZhang, Jie-lian论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaYang, Si-Xian论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaChen, Mei-Fei论文数: 0 引用数: 0 h-index: 0机构: Guangdong Univ Technol, Sch Mat & Energy, Guangzhou 510006, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaLiu, Yue论文数: 0 引用数: 0 h-index: 0机构: South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R ChinaLi, Jing-Bo论文数: 0 引用数: 0 h-index: 0机构: Zhejiang Univ, Coll Opt Sci & Engn, Hangzhou 310027, Peoples R China Guangdong Prov Key Lab Chip & Integrat Technol, Guangzhou 510631, Peoples R China South China Normal Univ, Sch Semicond Sci & Technol, Foshan 528225, Peoples R China
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